


Том 45, № 10 (2019)
- Год: 2019
- Статей: 28
- URL: https://journal-vniispk.ru/1063-7850/issue/view/12916
Article
Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction
Аннотация
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.



Direct Measurements of the Dynamics of the Electrocaloric Response of Ferroelectrics under Conditions of Arbitrary Heat Transfer
Аннотация
We have a new, effective method for direct measurements of the electrocaloric effect under arbitrary heat transfer conditions. The accuracy and reliability of measurements of the dynamics of changes in the sample temperature are due to the use of photodiode temperature sensors of the mid-IR range with the possibility of their in situ calibration.



Use of Direct Optical Heterodyning for Measuring Hardness by the Leeb Method
Аннотация
In this paper, we describe a portable system for measuring the indenter velocity in hardness meters implemented according to the Leeb method. The developed system is a fiber interferometer, in which a radiation source is a semiconductor laser with a wavelength of 1550 nm. The presented experimental results confirm the ability of the system to measure indenter velocities with an uncertainty of 0.001 m/s, which satisfies the requirements of the standards for this method of measuring hardness.



Observation of Laser-Induced Spark in the Density Jump in a Gas-Jet Target
Аннотация
In the design of powerful laser-plasma sources of extreme ultraviolet radiation with a gas jet as the target, the problem of degradation of gas nozzles is topical. Degradation is observed due to insufficient distance from the generation zone of the laser-induced spark to the nozzle exit. The comprehensive solution to this problem is proposed by forming the laser-induced spark in the density jumps that are generated upon deceleration of the supersonic gas jet. In such a density jump, the laser-induced spark is obtained and measurements of emission radiation intensity are performed.



Structural Changes in Si–CuSi Films upon Intercalation of Lithium Ions
Аннотация
We studied the possibility of using composite films representing amorphous silicon reinforced with crystalline inclusions of copper silicide as an anode material for lithium-ion batteries with liquid electrolyte. The films were made by layer-by-layer magnetron sputtering of amorphous silicon and copper, followed by low-temperature (100–200°C) annealing of the structure. The tests of the anodes revealed the effect of prolonged intense growth of their reversible capacity. To describe the effect, a phenomenological model based on the multidirectional migration of silicon and copper atoms in an inhomogeneous field of elastic mechanical stresses arising during electrode cycling is proposed.



The Effect of Low-Frequency Magnetohydrodynamic Modes on the Development of Filaments in the Globus-M Tokamak
Аннотация
Experimental data are presented that indicate the effect of the magnetohydrodynamic tearing mode in the Globus-M spherical tokamak on the occurrence of filamentary structures (filaments). The filaments are recorded by the Doppler backscattering method. The groups of filaments localized in the toroidal direction are discovered, the appearance of which is synchronized with the propagation of the tearing mode. Possible causes of the effect of low-frequency magnetohydrodynamic oscillations on the occurrence of filament groups are considered.



Determining the Static Dielectric Constant of Individual Hemoglobin Molecules by Electrostatic Force Microscopy
Аннотация
A technique for determination of the dielectric constant of individual hemoglobin molecules is presented. It is based on modeling the profiles of their images obtained using electrostatic force microscopy. The obtained values of the static dielectric constant are in agreement with the known literature data. The proposed method can be adapted to determine the dielectric characteristics of individual molecules of various proteins.



The Dynamic Strength of ZrO2-Based Ceramic Materials Manufactured by Additive Technology
Аннотация
Some specimens of zirconia-based ceramic and ceramic composite materials were manufactured by additive technologies. The experimental studies of the manufactured specimens under shock-wave loading were performed. Using an analysis of the full wave profiles recorded for these specimens on a laser interferometer in the process of their shock compression with an amplitude of 6.8 and 13.8 GPa, the Hugoniot elastic limit and spallation strength of ceramics were determined.



Generation of Giant Amplitude Pulses in a Klystron Chaos Auto-Oscillator
Аннотация
The presented experimental results demonstrate that microwave pulses of giant amplitude are generated in a klystron generator operating in the self-excited mode of chaotic oscillations. The auto-oscillator is assembled using a noisetron scheme that contains two five-cavity floating-drift klystrons serially connected in a ring, one of which operates in the mode of linear signal amplification (the linear klystron) and the other works in the mode of nonlinear signal amplification (the nonlinear klystron). It is established that, at a certain value of the beam current of a nonlinear klystron, intermittency of chaos–chaos type is realized in the auto-oscillation system in the form of chaotic sequences of microwave pulses of giant amplitude formed over the chaotic amplitude background. This type of intermittency is caused by the amplitude bistability of the nonlinear floating-drift klystron.



Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots
Аннотация
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.



The Voltage–Current Characteristics and Photoelectric Effect of Fullerene C60–N-Isoamylisatin 4-Methylphenylhydrazone Heterostructures
Аннотация
The results of using N-isoamylisatin 4-methylphenylhydrazone for the optimization of fullerene-based heterostructures are presented. The synthesis and microscopy of thin films of this hydrazone in combination with fullerene C60 are described alongside with the results of IR spectroscopy and study of their electrophysical properties. The addition of the considered organic compound to fullerene films has increased the photoconductivity by two orders of magnitude in comparison with the photoconductivity of C60 films. The synthesized thin-film structures have rectifying illumination voltage–current characteristics.



The Effect of Shungite Additives on Electric Discharge in Ammonium Perchlorate
Аннотация



A Method for Analyzing the Domain Structure in Magnetic Powder Microparticles
Аннотация
A method for analyzing the domain structure in magnetic powder microparticles based on the Mössbauer effect is proposed. This method has been experimentally verified for gadolinium ferrite-garnet (Gd3Fe5O12) powder particles 40 ± 5 μm in diameter in the vicinity of the magnetic compensation point Tcm = 286 K. It is shown that ferrite particles are single-domain near Tcm and pass to the multidomain state while moving away from Tcm.



The Magnetic Structure of NiFe2O4 Nanoparticles
Аннотация
The Mössbauer studies of the magnetic structure of nickel ferrite (NiFe2O4) nanoparticles (NPs) are presented. It is shown that the redistribution of ions over nonequivalent crystallographic positions occurs upon a decrease in the size of NiFe2O4 crystallites to nanovalues, thus leading to the structural transformation of NiFe2O4 nanoparticles from inverse spinel to mixed spinel. It has been established that the magnetic moments of Fe ions in the volume of NiFe2O4 nanoparticles are ferromagnetically (collinearly) ordered, being noncollinear (or oblique) in the near-surface layer probably due to the frustration of moments in the near-surface layer of nanoparticles.



The Effect of the Polarization Characteristics of Probe Light on the Signal of Optically Detected Magnetic Resonance in Magnetometric and Gyroscopic Quantum Sensors
Аннотация
We consider the effect of the polarization characteristics of probe light on the signal of optically detected magnetic resonance in quantum sensors, including quantum magnetometers based on the phenomenon of electron paramagnetic resonance and quantum gyroscopes employing both the electron and nuclear magnetic resonance. Relationships between the magnetic resonance signal magnitude and parameters of the optical system elements, which are based on the Stokes–Mueller formalism, are derived and verified. It is found that the main destructive influence in the signal in a standard two-beam scheme is produced by phase delays introduced by both metallic and dielectric mirrors. Methods for compensation of this destructive influence are proposed and verified.



Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation
Аннотация
It is shown that NO2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO3:Au thin films activated by laser diode radiation with maximum intensity at 400 nm instead of constant heating. The radiation-activated photodesorption reduces the time of sensor response to NO2. A high humidity of air under conditions of room-temperature irradiation additionally increases the device sensitivity to NO2 due to the appearance of additional adsorption sites. The absence of a sensor response to reducing gases and varying oxygen concentration in the atmosphere is caused by the photodesorption of chemisorbed \({\text{O}}_{2}^{ - }\) species during their interaction with holes generated in intrinsic optical transitions in the near-surface region of WO3 film.



Localization of Upper-Valley Electrons in a Narrow-Bandgap Channel: a Possible Additional Mechanism of Current Increase in DA–DpHEMT
Аннотация
The influence of the localization of upper-valley electrons in a narrow-bandgap channel on the drift velocity burst in AlxGa1 –xAs–GaAs transistor heterostructures with double-sided doping has been theoretically estimated. It is established that the fraction of electrons passing in this case from the narrow-bandgap channel to wide-bandgap material is smaller than in the usual structures, which can lead in some cases to an increase in the electron drift velocity by up to 15%. This phenomenon can provide an additional mechanism of current increase in transistors based on heterostructures with donor–acceptor doping.



Studying the Formation of Antireflection Coatings on Multijunction Solar Cells
Аннотация
The formation of antireflection coating on multijunction solar cells based on A3B5 semiconductor heterostructures has been studied at the stage of structure surface processing by methods of plasmachemical, wet chemical, and ion-beam etching. A technology of creating antireflection coatings based on TiOx/SiO2 layers is developed. The obtained coatings are characterized by improved adhesion to the surface of heterostructure and reduced reflection coefficient of multijunction solar cells.



Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-μm Wavelength Range
Аннотация
We have studied the generation of frequency combs by quantum cascade lasers (QCLs) emitting in the 8-μm wavelength range. Results showed the presence of a self-pulsation regime near the lasing threshold. Further increase in the pumping current led to a sharp increase in width of the lasing spectrum, which allowed us to obtain frequency combs with a spectral width exceeding 1.5 THz. This behavior of QCLs can be explained by radiation absorption at the stripe edge that is related to the penetration of waveguide mode into unpumped regions.



Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
Аннотация
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.



Dust-Acoustic Solitons in Dusty Ionospheric Plasma Containing Adiabatically Captured Electrons
Аннотация
The possible propagation of localized wave structures such as dust-acoustic solitons in dusty ionospheric plasma containing photoelectrons, electrons and ions of the ionosphere, and charged dust particles is considered. Intervals of the possible soliton velocities and amplitudes are determined. Solitary wave solutions for various dimensions and concentrations of particles in dusty ionospheric plasma are found.



Peculiarities of the Azimuthal Transport of High-Current Electron Beams in a Curvilinear Cavity with a Transverse Magnetic Field
Аннотация
Peculiarities of the azimuthal transport of high-current electron beams in a curvilinear cavity with a transverse magnetic field have been studied by means of PIC simulations. It is established that the electron beam current exceeding a certain threshold level favors the appearance of electrons with negative azimuthal momentum.



A Change in the Debye Temperature of a Single-Component Substance upon Amorphization
Аннотация
A method for calculating the Debye temperature of a single-component substance in the amorphous state is proposed based on a nonlinear dependence of first coordination number kn of the given structure on its packing factor kp as established previously. Proceeding from previously defined parameters of the Mie–Lennard-Jones potential, the Debye temperatures have been calculated for some pure crystalline and amorphous metals, diamond, silicon, and germanium, which are in good agreement with estimations reported by other researchers. It is shown that a minimum specific Helmholtz free energy is attained at kp = 0.45556, which means that this packing corresponds to a thermodynamically stable amorphous structure.



Studying Near-Surface Layers of Germanium Implanted with Cobalt Ions
Аннотация
Results of an investigation of the surface of germanium nanostructured by means of ion implantation are presented. Single-crystalline germanium (c-Ge) plates were irradiated by 40-keV cobalt Co+ ions in a dose range of (2–8) × 1016 ion/cm2. Evolution of the germanium surface morphology with increasing ion dose was studied by method of scanning electron microscopy. It is established that an increase in the ion implantation dose is accompanied by gradual formation of a surface layer consisting of spherical particles with diameters of ~150 nm. Analysis of the X-ray diffraction patterns of samples was indicative of the appearance of nanosized cobalt germanide (CoGe) particles in the ion-implanted surface layer.



The Role of Elastic Stresses in the Formation of Nitride Nanowires with Cubic Crystalline Structure
Аннотация
A new theoretical explanation of the growth of nitride nanowires (NWs) in a metastable cubic crystalline phase (sphalerite) is proposed. It is shown that the allowance for elastic stresses can explain the growth of single-crystalline nitride NWs with a cubic crystalline lattice. The possibility of growing GaN nanowires in a metastable phase on sapphire substrates is considered.



Electron-Impact-Induced Fragmentation of a Glutamine Molecule
Аннотация
The formation of ionized products upon single and dissociative ionization of a glutamine (C5H10N2O3) molecule by electron impact at low (70 eV) and high (11.5 MeV) energies has been studied by method of mass spectrometry. The mass spectra of glutamine molecules have been obtained upon electron irradiation to various doses (0, 5, 10, and 20 kGy) and for various threshold functions of ion fragment yield. The absolute values of ion fragment appearance energies are determined. Electron beams were generated by a three-electrode gun and electron accelerator (microtron). Comparative analysis of the measured mass spectra of unirradiated and irradiated glutamine molecules showed that high-energy irradiation produced irreversible changes in the molecular structure.



Studying the Mutual Influence of a Set of Strikers during Simultaneous High-Velocity Entry into Water
Аннотация
High-velocity motion of a set of supercavitating kinetic strikers during their simultaneous entry into water has been experimentally studied. A special experimental method of launching supercavitating kinetic strikers and studying their high-velocity motion under hydroballistic test setup conditions has been developed. Experimental data on the motion of two identical supercavitating strikers in the initial stage of trajectory at velocities about 1100 m/s have been obtained, which demonstrate the possibility of stable propagation of a set of such strikers in water until reaching an underwater target.



Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
Аннотация
Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents.


