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Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.

Авторлар туралы

S. Davydov

Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics

Хат алмасуға жауапты Автор.
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg

A. Lebedev

Ioffe Physical Technical Institute

Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021

S. Lebedev

Ioffe Physical Technical Institute

Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021

A. Sitnikova

Ioffe Physical Technical Institute

Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021

L. Sorokin

Ioffe Physical Technical Institute

Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021

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