Enviar artigo por via de e-mail Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
- Autores: Davydov S.Y.1,2, Lebedev A.A.1, Lebedev S.P.1, Sitnikova A.A.1, Sorokin L.M.1
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Afiliações:
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Edição: Volume 42, Nº 12 (2016)
- Páginas: 1153-1155
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/202108
- DOI: https://doi.org/10.1134/S1063785016120051
- ID: 202108
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Resumo
The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.
Sobre autores
S. Davydov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Autor responsável pela correspondência
Email: Sergei_Davydov@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg
A. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Rússia, St. Petersburg, 194021
S. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Rússia, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Rússia, St. Petersburg, 194021
L. Sorokin
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Rússia, St. Petersburg, 194021
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