Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
- 作者: Davydov S.Y.1,2, Lebedev A.A.1, Lebedev S.P.1, Sitnikova A.A.1, Sorokin L.M.1
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隶属关系:
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- 期: 卷 42, 编号 12 (2016)
- 页面: 1153-1155
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/202108
- DOI: https://doi.org/10.1134/S1063785016120051
- ID: 202108
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详细
The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.
作者简介
S. Davydov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
编辑信件的主要联系方式.
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg
A. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
S. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
L. Sorokin
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
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