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Evolution of the Current-Voltage Characteristic of a Bipolar Memristor
- Authors: Fadeev A.V.1, Rudenko K.V.1
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Affiliations:
- Valiev Institute of Physics and Technology of the Russian Academy of Sciences
- Issue: Vol 53, No 4 (2024)
- Pages: 311-317
- Section: MEMRISTORS
- URL: https://journal-vniispk.ru/0544-1269/article/view/269774
- DOI: https://doi.org/10.31857/S0544126924040036
- ID: 269774
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Abstract
A theoretical model is proposed that can describe the current-voltage characteristic of a bipolar filament memristor during reversible switching. The model allows us to describe various types of current-voltage curves observed in experiments. It has been established that the initially formed filament, after a series of switching, acquires a stationary shape that reproduces the current-voltage characteristic.
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About the authors
A. V. Fadeev
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Author for correspondence.
Email: AlexVFadeev@gmail.com
Russian Federation, Moscow
K. V. Rudenko
Valiev Institute of Physics and Technology of the Russian Academy of Sciences
Email: rudenko@ftian.ru
Russian Federation, Moscow
References
- Soni K. and Sahoo S. A Review on Different Memristor Modeling and Applications // 2022 International Mobile and Embedded Technology Conference (MECON), Noida, India, 2022. P. 688–695.
- Xiao Y., Jiang B., Zhang Z., Ke Sh., Jin Y., Wen X. A review of memristor: material and structure design, device performance, applications and prospects // Sci. and Tec. of adv. Ma t. 2023. V. 24. № 1. P. 1–24.
- Patil A.R., Dongale T.D., Kamat R.K., Rajpure K.Y. Binary metal oxide-based resistive switching memory devices: a status review // Materials today communications 2023. V. 34. P. 105356.
- Fadeev A.V., Rudenko K.V. To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time // Russ. Microelectron. 2022. V. 50. № 5. P. 311–325.
- Wu L., Liu H., Li J., Wang S., Wang X. A Multi-level Memristor Based on Al-Doped HfO2 Thin Film. // Nanoscale Res. Lett. 2019. V. 14. P. 177.
- Larentis S., Nardi F., Balatti S., Gilmer D.C. and Ielmini D. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: Modeling. // IEEE Trans. Electron Devices. 2012. V. 59. P. 2468–2475.
- Tang Z., Fang L., Xu N., Liu R. Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure. // J. Appl. Phys. 2015. V. 118. P. 185309.
- Villena M.A., González M.B., Roldán J.B., Campabadal F., Jiménez-Molinos F., Gómez-Campos F.M., Suñé J. An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs. // Solid-State Electronics. 2015. V. 111. P. 47–51.
- Rziga F.O., Mbarek K., Ghedira S., Besbes K. An efficient Verilog-A memristor model implementation: simulation and application. // J. Comput. Electron. 2019. V. 18. P. 1055–1064.
- Ji X., Dong Z., Lai C.S., Zhou G., Qi D. A physics-oriented memristor model with the coexistence of NDR effect and RS memory behavior for bio-inspired computing. // Materials Today Advances, 2022. V. 16. P. 100293.
- Marchewka A., Waser R. and Menzel S. Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier model. // 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC. USA. 2015. P. 297–300.
- Maruf M.H. &. Ali S.I. Review and comparative study of I–V characteristics of different memristor models with sinusoidal input. // International Journal of Electronics, 2020. V. 107:3. P. 349–375.
- Guo T., Pan K., Jiao Y., Sun B., Du C., Mills J.P., Chen Z., Zhao X., Wei L., Zhou Y.N., Wu Y.A. Versatile Memristor for Memory and Neuromorphic Computing. // Nanoscale Horiz. 2022. V. 7. № 3. P. 299–310.
- Shen W., Kumar S., Kumar S. Experimentally calibrated electro-thermal modeling of temperature dynamics in memristors. // Appl. Phys. Lett. 2021. V. 118. P. 103505.
- Fadeev A.V., Rudenko K.V. Filament-based memristor switching model. // Microelectron. Eng. 2024. V. 289. P. 112179.
- Sze S.M., Ng K.K. Physics of Semiconductor Devices. // Third ed., John Wiley & Sons, New Jersey, 2007.
- Marchewka A., Waser R. and Menzel S. A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides. // 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). Nuremberg. Germany. 2016. P. 145–148.
- Manning J.R. Diffusion kinetics for atoms in crystals. // D. Van nostrand company. inc. princeton 1968.
- Permiakova O.O., Rogozhin A.E., Miakonkikh A.V., Smirnova E.A., Rudenko K.V. Transition between resistive switching modes in asymmetric HfO2-based structures. // Microelectron. Eng. 2023. V. 275. 111983.
- Mahata C., Kang M., Kim S. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode Nanomaterials. 2020. V. 10. P. 2069.
- Tang L., Maruyama H., Han T., Nino J.C., Chen Y., Zhang D. Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks. // App. Surf. Sci. 2020. V. 515. P. 146015.
- Hao Y.X., Zhang Y., Wu Z.H.., Zhang X.M., Shi T., Wang Y.Z., Zhu J.X., Wang R., Wang Y., Liu Q. Uniform, fast, and reliable CMOS compatible resistive switching memory. // J. Semicond. 2022. V. 43. № 5. P. 054102.
- Jiang H., Han L., Lin P., Wang Z., Jang M.H., Wu Q., Barnell M., Yang J.J., Xin H.L., Xia Q. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor. // Sci. Rep. 2016. V. 6. P. 28525.
- Otsus M., Merisalu J.; Tarre A., Peikolainen A.-L., Kozlova J., Kukli K., Tamm A.A. Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles. // 2022. V. 11. P. 2963.
- Ismail M., Mahata C., Kang M., Kim S, Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering. // Nanoscale Res. Lett. 2022. V. 17. P. 61.
Supplementary files
Supplementary Files
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Fig. 1. General scheme of the memristor cell adopted in the model
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Fig. 2. Calculated volt-ampere characteristics corresponding to different radii of the initially moulded filament
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Fig. 3. Calculated volt-ampere characteristics corresponding to different boundary voltages of RESET operation
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Fig. 4. Calculated volt-ampere characteristics corresponding to four switching cycles
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