Photodetectors based on CuInS 2

L. N. Vostretsova; S. A. Gavrilov; S. V. Bulyarsky

doi:10.1134/S1063782616010061

Photodetectors based on CuInS₂

Autores: Vostretsova L.N.¹, Gavrilov S.A.², Bulyarsky S.V.¹
Afiliações:
1. Ulyanovsk State University
2. National Research University of Electronic Technology “MIET”
Edição: Volume 50, Nº 1 (2016)
Páginas: 106-111
Seção: Physics of Semiconductor Devices
URL: https://journal-vniispk.ru/1063-7826/article/view/196697
DOI: https://doi.org/10.1134/S1063782616010061
ID: 196697

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Resumo

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS₂ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10¹⁶ cm^–2.