Field-effect transistor with 2D carrier systems in the gate and channel

Abstract

The application of the resonant-tunneling effect for charge carriers in transistors is considered. It is shown that the application of the resonant character of tunneling makes it possible to decrease the leakage currents, which are one of the main causes of the crisis in the development of transistors at present. A new type of field-effect transistors with a gate and a channel is proposed on the basis of 2D systems of carriers. The prospects for further miniaturization of the transistors are considered. For transistors with resonant tunneling, extreme miniaturization suppresses the resonant tunneling of carriers and, thus, increases leakage currents.