On the photon annealing of silicon-implanted gallium-nitride layers
- Авторы: Seleznev B.I.1, Moskalev G.Y.2, Fedorov D.G.1,2
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Учреждения:
- Novgorod State University
- OKB-Planeta, Inc.
- Выпуск: Том 50, № 6 (2016)
- Страницы: 832-838
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journal-vniispk.ru/1063-7826/article/view/197319
- DOI: https://doi.org/10.1134/S1063782616060221
- ID: 197319
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Аннотация
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
Об авторах
B. Seleznev
Novgorod State University
Автор, ответственный за переписку.
Email: Boris.Seleznev@novsu.ru
Россия, Velikii Novgorod, 173004
G. Moskalev
OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Россия, Velikii Novgorod, 173004
D. Fedorov
Novgorod State University; OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Россия, Velikii Novgorod, 173004; Velikii Novgorod, 173004
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