Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
- Авторлар: Abramov A.S.1,2, Andronikov D.A.1,2, Emtsev K.V.1,2, Kukin A.V.1,2, Semenov A.V.1,2, Terukova E.E.1,2, Titov A.S.1,2, Yakovlev S.A.1,2
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Мекемелер:
- Ioffe Physical–Technical Institute
- RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 8 (2016)
- Беттер: 1074-1078
- Бөлім: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/197670
- DOI: https://doi.org/10.1134/S1063782616080030
- ID: 197670
Дәйексөз келтіру
Аннотация
The photoinduced degradation of photovoltaic converters based on an a-Si:H/µc-Si:H tandem structure under a standard illuminance of 1000 W/m2 is studied. The spectral and current–voltage characteristics of specially fabricated samples with various degrees of crystallinity of the intrinsic layer in the lower (microcrystalline) cascade are measured in the course of the tests.
Авторлар туралы
A. Abramov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
D. Andronikov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
K. Emtsev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
A. Kukin
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
A. Semenov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
E. Terukova
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
A. Titov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
S. Yakovlev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194068
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