Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

Аннотация

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.