电邮这篇文章 Inhomogeneous dopant distribution in III–V nanowires
- 作者: Leshchenko E.D.1,2, Dubrovskii V.G.1,2,3
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隶属关系:
- St. Petersburg Academic University
- ITMO University
- Ioffe Institute
- 期: 卷 51, 编号 11 (2017)
- 页面: 1427-1430
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journal-vniispk.ru/1063-7826/article/view/201498
- DOI: https://doi.org/10.1134/S1063782617110173
- ID: 201498
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详细
We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
作者简介
E. Leshchenko
St. Petersburg Academic University; ITMO University
Email: dubrovskii@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
V. Dubrovskii
St. Petersburg Academic University; ITMO University; Ioffe Institute
编辑信件的主要联系方式.
Email: dubrovskii@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
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