Мақаланы E-mail арқылы жіберу Inhomogeneous dopant distribution in III–V nanowires
- Авторлар: Leshchenko E.D.1,2, Dubrovskii V.G.1,2,3
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Мекемелер:
- St. Petersburg Academic University
- ITMO University
- Ioffe Institute
- Шығарылым: Том 51, № 11 (2017)
- Беттер: 1427-1430
- Бөлім: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journal-vniispk.ru/1063-7826/article/view/201498
- DOI: https://doi.org/10.1134/S1063782617110173
- ID: 201498
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Тек жазылушылар үшін
Аннотация
We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
Авторлар туралы
E. Leshchenko
St. Petersburg Academic University; ITMO University
Email: dubrovskii@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
V. Dubrovskii
St. Petersburg Academic University; ITMO University; Ioffe Institute
Хат алмасуға жауапты Автор.
Email: dubrovskii@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194021
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