New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
- Авторы: Gorokhov E.B.1, Astankova K.N.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
-
Учреждения:
- Institute of Semiconductor Physics SB Russian Academy of Sciences
- Novosibirsk State University
- Выпуск: Том 52, № 5 (2018)
- Страницы: 628-631
- Раздел: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journal-vniispk.ru/1063-7826/article/view/203231
- DOI: https://doi.org/10.1134/S1063782618050111
- ID: 203231
Цитировать
Аннотация
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2
Об авторах
E. Gorokhov
Institute of Semiconductor Physics SB Russian Academy of Sciences
Автор, ответственный за переписку.
Email: gorokhov@isp.nsc.ru
Россия, Novosibirsk, 630090
K. Astankova
Institute of Semiconductor Physics SB Russian Academy of Sciences
Email: gorokhov@isp.nsc.ru
Россия, Novosibirsk, 630090
I. Azarov
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Volodin
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
Дополнительные файлы
