New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
- Авторлар: Gorokhov E.B.1, Astankova K.N.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
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Мекемелер:
- Institute of Semiconductor Physics SB Russian Academy of Sciences
- Novosibirsk State University
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 628-631
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journal-vniispk.ru/1063-7826/article/view/203231
- DOI: https://doi.org/10.1134/S1063782618050111
- ID: 203231
Дәйексөз келтіру
Аннотация
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2
Авторлар туралы
E. Gorokhov
Institute of Semiconductor Physics SB Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: gorokhov@isp.nsc.ru
Ресей, Novosibirsk, 630090
K. Astankova
Institute of Semiconductor Physics SB Russian Academy of Sciences
Email: gorokhov@isp.nsc.ru
Ресей, Novosibirsk, 630090
I. Azarov
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
V. Volodin
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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