Отправить статью по E-mail Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices
- Авторы: Kudryashov D.A.1, Gudovskikh A.S.1,2, Baranov A.I.1
-
Учреждения:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Выпуск: Том 52, № 13 (2018)
- Страницы: 1775-1781
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journal-vniispk.ru/1063-7826/article/view/204957
- DOI: https://doi.org/10.1134/S1063782618130092
- ID: 204957
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.
Об авторах
D. Kudryashov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: kudryashovda@spbau.ru
Россия, St. Petersburg, 194021
A. Gudovskikh
St. Petersburg National Research Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: kudryashovda@spbau.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197376
A. Baranov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: kudryashovda@spbau.ru
Россия, St. Petersburg, 194021
Дополнительные файлы
