Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure

Аннотация

A sequence of inhomogeneous differential equations for reconstructing the derivative of the nonlinear current–voltage characteristic is studied. The right-hand side of these equations is the experimentally determined dependence of the first-harmonic voltage on direct current. Such voltage arises, e.g., at the output of a nonlinear semiconductor structure simultaneously exposed to alternating and direct current. Based on numerical solutions of differential equations, the developed technique is applied to reconstruct the derivative of the current–voltage characteristic of two antiparallel connected p–n junctions.