| 期 |
标题 |
文件 |
| 卷 53, 编号 1 (2019) |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
(Eng)
|
|
Bannaya V., Nikitina E.
|
| 卷 52, 编号 13 (2018) |
Features of the Electron Mobility in the n-InSe Layered Semiconductor |
(Eng)
|
|
Abdinov A., Babayeva R.
|
| 卷 52, 编号 13 (2018) |
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method |
(Eng)
|
|
Usanov D., Postelga A., Kalyamin A., Sharov I.
|
| 卷 52, 编号 13 (2018) |
Conduction-Electron Spin Resonance in HgSe Crystals |
(Eng)
|
|
Veinger A., Kochman I., Okulov V., Andriichuk M., Paranchich L.
|
| 卷 52, 编号 13 (2018) |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
(Eng)
|
|
Emtsev V., Abrosimov N., Kozlovski V., Poloskin D., Oganesyan G.
|
| 卷 52, 编号 10 (2018) |
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions |
(Eng)
|
|
Sardarli R., Abdullayev A., Aliyeva N., Salmanov F., Yusifov M., Orudjeva A.
|
| 卷 52, 编号 8 (2018) |
Electronic Processes in CdIn2Te4 Crystals |
(Eng)
|
|
Grushka O., Chupyra S., Bilichuk S., Parfenyuk O.
|
| 卷 52, 编号 8 (2018) |
Optical Absorption of Copper-Activated Zinc-Sulfide Polycrystalline Layers |
(Eng)
|
|
Avanesyan V., Rakina A., Kablukova N.
|
| 卷 52, 编号 8 (2018) |
Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals |
(Eng)
|
|
Veinger A., Kochman I., Okulov V., Andriichuk M., Paranchich L.
|
| 卷 52, 编号 7 (2018) |
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySnxVyTe Alloys upon Doping |
(Eng)
|
|
Skipetrov E., Konstantinov N., Skipetrova L., Knotko A., Slynko V.
|
| 卷 52, 编号 7 (2018) |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
(Eng)
|
|
Ishchenko D., Neizvestny I.
|
| 卷 52, 编号 7 (2018) |
Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation |
(Eng)
|
|
Jahangirli Z., Hashimzade F., Huseynova D., Mehdiyev B., Mustafaev N.
|
| 卷 52, 编号 6 (2018) |
AC Electrical Conductivity of FeIn2Se4 Single Crystals |
(Eng)
|
|
Niftiyev N., Mammadov F., Quseynov V., Kurbanov S.
|
| 卷 52, 编号 6 (2018) |
Contribution of Iron Clusters to the Magnetic Properties of Pb1 – yFeyTe Alloys |
(Eng)
|
|
Skipetrov E., Solovev A., Slynko V.
|
| 卷 52, 编号 6 (2018) |
Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures |
(Eng)
|
|
Poklonski N., Vyrko S., Dzeraviaha A.
|
| 卷 52, 编号 6 (2018) |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
(Eng)
|
|
Evstigneev V., Varavin V., Chilyasov A., Remesnik V., Moiseev A., Stepanov B.
|
| 卷 52, 编号 6 (2018) |
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
(Eng)
|
|
Terukov E., Marchenko A., Seregin P., Zhukov N.
|
| 卷 52, 编号 3 (2018) |
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands |
(Eng)
|
|
Sobolev V., Perevoshchikov D.
|
| 卷 52, 编号 3 (2018) |
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |
(Eng)
|
|
Romaka V., Rogl P., Frushart D., Kaczorowski D.
|
| 卷 52, 编号 3 (2018) |
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals |
(Eng)
|
|
Plyatsko S., Rashkovetskyi L.
|
| 卷 52, 编号 3 (2018) |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
(Eng)
|
|
Kozlovski V., Vasil’ev A., Karaseov P., Lebedev A.
|
| 卷 52, 编号 3 (2018) |
Electrical Breakdown in Pure n- and p-Si |
(Eng)
|
|
Bannaya V., Nikitina E.
|
| 卷 52, 编号 3 (2018) |
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals |
(Eng)
|
|
Morozova N., Miroshnikov B.
|
| 卷 52, 编号 3 (2018) |
Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System |
(Eng)
|
|
Borshch N., Kurganskii S.
|
| 卷 52, 编号 2 (2018) |
Conductivity of Ga2O3–GaAs Heterojunctions |
(Eng)
|
|
Kalygina V., Remizova I., Tolbanov O.
|
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