| Issue |
Title |
File |
| Vol 51, No 2 (2017) |
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes |
(Eng)
|
|
Prudaev I.A., Kopyev V.V., Romanov I.S., Oleynik V.L.
|
| Vol 51, No 2 (2017) |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
(Eng)
|
|
Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E.
|
| Vol 51, No 2 (2017) |
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment |
(Eng)
|
|
Erofeev E.V., Fedin I.V., Kutkov I.V., Yuryev Y.N.
|
| Vol 51, No 2 (2017) |
MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice |
(Eng)
|
|
Kuznetzov P.I., Averin S.V., Zhitov V.A., Zakharov L.Y., Kotov V.M.
|
| Vol 51, No 2 (2017) |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
(Eng)
|
|
Polubavkina Y.S., Zubov F.I., Moiseev E.I., Kryzhanovskaya N.V., Maximov M.V., Semenova E.S., Yvind K., Asryan L.V., Zhukov A.E.
|
| Vol 51, No 2 (2017) |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
(Eng)
|
|
Zakgeim A.L., Il’inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A., Remennyy M.A., Stus’ N.M., Usikova A.A., Cherniakov A.E.
|
| Vol 51, No 1 (2017) |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
(Eng)
|
|
Musalinov S.B., Anzulevich A.P., Bychkov I.V., Gudovskikh A.S., Shvarts M.Z.
|
| Vol 51, No 1 (2017) |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
(Eng)
|
|
Rybalchenko D.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Timoshina N.K., Kalyuzhnyy N.A.
|
| Vol 51, No 1 (2017) |
Optimization of the parameters of power sources excited by β-radiation |
(Eng)
|
|
Bulyarskiy S.V., Lakalin A.V., Abanin I.E., Amelichev V.V., Svetuhin V.V.
|
| Vol 51, No 1 (2017) |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
(Eng)
|
|
Nekorkin S.M., Zvonkov B.N., Baidus N.V., Dikareva N.V., Vikhrova O.V., Afonenko A.A., Ushakov D.V.
|
| Vol 51, No 1 (2017) |
Anodes for Li-ion batteries based on p-Si with self-organized macropores |
(Eng)
|
|
Preobrazhenskiy N.E., Astrova E.V., Pavlov S.I., Voronkov V.B., Rumyantsev A.M., Zhdanov V.V.
|
| Vol 50, No 10 (2016) |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics |
(Eng)
|
|
Khvostikov V.P., Sorokina S.V., Khvostikova O.A., Levin R.V., Pushnyi B.V., Timoshina N.K., Andreev V.M.
|
| Vol 50, No 10 (2016) |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells |
(Eng)
|
|
Novikov G.F., Tsai W., Bocharov K.V., Rabenok E.V., Jeng M., Chang L., Feng W., Ao J., Sun Y.
|
| Vol 50, No 10 (2016) |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures |
(Eng)
|
|
Musaev A.M.
|
| Vol 50, No 10 (2016) |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) |
(Eng)
|
|
Andreev V.M., Malevskiy D.A., Pokrovskiy P.V., Rumyantsev V.D., Chekalin A.V.
|
| Vol 50, No 10 (2016) |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
(Eng)
|
|
Asryan L.V., Zubov F.I., Kryzhanovskaya N.V., Maximov M.V., Zhukov A.E.
|
| Vol 50, No 10 (2016) |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
(Eng)
|
|
Bochkareva N.I., Sheremet I.A., Shreter Y.G.
|
| Vol 50, No 10 (2016) |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
(Eng)
|
|
Khabibullin R.A., Shchavruk N.V., Pavlov A.Y., Ponomarev D.S., Tomosh K.N., Galiev R.R., Maltsev P.P., Zhukov A.E., Cirlin G.E., Zubov F.I., Alferov Z.I.
|
| Vol 50, No 10 (2016) |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
(Eng)
|
|
Tsatsulnikov A.F., Lundin V.W., Zavarin E.E., Yagovkina M.A., Sakharov A.V., Usov S.O., Zemlyakov V.E., Egorkin V.I., Bulashevich K.A., Karpov S.Y., Ustinov V.M.
|
| Vol 50, No 10 (2016) |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
(Eng)
|
|
Bobrov M.A., Maleev N.A., Blokhin S.A., Kuzmenkov A.G., Vasil’ev A.P., Blokhin A.A., Guseva Y.A., Kulagina M.M., Zadiranov Y.M., Troshkov S.I., Lysak V., Ustinov V.M.
|
| Vol 50, No 10 (2016) |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
(Eng)
|
|
Veselov D.A., Shashkin I.S., Bobretsova Y.K., Bakhvalov K.V., Lutetskiy A.V., Kapitonov V.A., Pikhtin N.A., Slipchenko S.O., Sokolova Z.N., Tarasov I.S.
|
| Vol 50, No 10 (2016) |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
(Eng)
|
|
Kunitsyna E.V., Grebenshchikova E.A., Konovalov G.G., Andreev I.A., Yakovlev Y.P.
|
| Vol 50, No 10 (2016) |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
(Eng)
|
|
Zubov F.I., Kryzhanovskaya N.V., Moiseev E.I., Polubavkina Y.S., Simchuk O.I., Kulagina M.M., Zadiranov Y.M., Troshkov S.I., Lipovskii A.A., Maximov M.V., Zhukov A.E.
|
| Vol 50, No 10 (2016) |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
(Eng)
|
|
Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Kurochkin A.S., Gladyshev A.G., Babichev A.V., Gadzhiev I.M., Buyalo M.S., Zadiranov Y.M., Usikova A.A., Shernyakov Y.M., Savelyev A.V., Nyapshaev I.A., Egorov A.Y.
|
| Vol 50, No 9 (2016) |
On methods of determining the band gap of semiconductor structures with p–n junctions |
(Eng)
|
|
Vikulin I.M., Korobitsyn B.V., Kriskiv S.K.
|
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