| 期 |
标题 |
文件 |
| 卷 51, 编号 2 (2017) |
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment |
(Eng)
|
|
Erofeev E., Fedin I., Kutkov I., Yuryev Y.
|
| 卷 51, 编号 2 (2017) |
MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice |
(Eng)
|
|
Kuznetzov P., Averin S., Zhitov V., Zakharov L., Kotov V.
|
| 卷 51, 编号 2 (2017) |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
(Eng)
|
|
Polubavkina Y., Zubov F., Moiseev E., Kryzhanovskaya N., Maximov M., Semenova E., Yvind K., Asryan L., Zhukov A.
|
| 卷 51, 编号 2 (2017) |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
(Eng)
|
|
Zakgeim A., Il’inskaya N., Karandashev S., Lavrov A., Matveev B., Remennyy M., Stus’ N., Usikova A., Cherniakov A.
|
| 卷 51, 编号 2 (2017) |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
(Eng)
|
|
Yurkov S., Mnatsakanov T., Levinshtein M., Tandoev A., Palmour J.
|
| 卷 51, 编号 2 (2017) |
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes |
(Eng)
|
|
Prudaev I., Kopyev V., Romanov I., Oleynik V.
|
| 卷 51, 编号 1 (2017) |
Optimization of the parameters of power sources excited by β-radiation |
(Eng)
|
|
Bulyarskiy S., Lakalin A., Abanin I., Amelichev V., Svetuhin V.
|
| 卷 51, 编号 1 (2017) |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
(Eng)
|
|
Nekorkin S., Zvonkov B., Baidus N., Dikareva N., Vikhrova O., Afonenko A., Ushakov D.
|
| 卷 51, 编号 1 (2017) |
Anodes for Li-ion batteries based on p-Si with self-organized macropores |
(Eng)
|
|
Preobrazhenskiy N., Astrova E., Pavlov S., Voronkov V., Rumyantsev A., Zhdanov V.
|
| 卷 51, 编号 1 (2017) |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
(Eng)
|
|
Musalinov S., Anzulevich A., Bychkov I., Gudovskikh A., Shvarts M.
|
| 卷 51, 编号 1 (2017) |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
(Eng)
|
|
Rybalchenko D., Mintairov S., Salii R., Shvarts M., Timoshina N., Kalyuzhnyy N.
|
| 卷 50, 编号 10 (2016) |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
(Eng)
|
|
Asryan L., Zubov F., Kryzhanovskaya N., Maximov M., Zhukov A.
|
| 卷 50, 编号 10 (2016) |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
(Eng)
|
|
Bochkareva N., Sheremet I., Shreter Y.
|
| 卷 50, 编号 10 (2016) |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
(Eng)
|
|
Khabibullin R., Shchavruk N., Pavlov A., Ponomarev D., Tomosh K., Galiev R., Maltsev P., Zhukov A., Cirlin G., Zubov F., Alferov Z.
|
| 卷 50, 编号 10 (2016) |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
(Eng)
|
|
Tsatsulnikov A., Lundin V., Zavarin E., Yagovkina M., Sakharov A., Usov S., Zemlyakov V., Egorkin V., Bulashevich K., Karpov S., Ustinov V.
|
| 卷 50, 编号 10 (2016) |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
(Eng)
|
|
Bobrov M., Maleev N., Blokhin S., Kuzmenkov A., Vasil’ev A., Blokhin A., Guseva Y., Kulagina M., Zadiranov Y., Troshkov S., Lysak V., Ustinov V.
|
| 卷 50, 编号 10 (2016) |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
(Eng)
|
|
Veselov D., Shashkin I., Bobretsova Y., Bakhvalov K., Lutetskiy A., Kapitonov V., Pikhtin N., Slipchenko S., Sokolova Z., Tarasov I.
|
| 卷 50, 编号 10 (2016) |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
(Eng)
|
|
Kunitsyna E., Grebenshchikova E., Konovalov G., Andreev I., Yakovlev Y.
|
| 卷 50, 编号 10 (2016) |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
(Eng)
|
|
Zubov F., Kryzhanovskaya N., Moiseev E., Polubavkina Y., Simchuk O., Kulagina M., Zadiranov Y., Troshkov S., Lipovskii A., Maximov M., Zhukov A.
|
| 卷 50, 编号 10 (2016) |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
(Eng)
|
|
Novikov I., Karachinsky L., Kolodeznyi E., Bougrov V., Kurochkin A., Gladyshev A., Babichev A., Gadzhiev I., Buyalo M., Zadiranov Y., Usikova A., Shernyakov Y., Savelyev A., Nyapshaev I., Egorov A.
|
| 卷 50, 编号 10 (2016) |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics |
(Eng)
|
|
Khvostikov V., Sorokina S., Khvostikova O., Levin R., Pushnyi B., Timoshina N., Andreev V.
|
| 卷 50, 编号 10 (2016) |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells |
(Eng)
|
|
Novikov G., Tsai W., Bocharov K., Rabenok E., Jeng M., Chang L., Feng W., Ao J., Sun Y.
|
| 卷 50, 编号 10 (2016) |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures |
(Eng)
|
|
Musaev A.
|
| 卷 50, 编号 10 (2016) |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) |
(Eng)
|
|
Andreev V., Malevskiy D., Pokrovskiy P., Rumyantsev V., Chekalin A.
|
| 卷 50, 编号 9 (2016) |
On methods of determining the band gap of semiconductor structures with p–n junctions |
(Eng)
|
|
Vikulin I., Korobitsyn B., Kriskiv S.
|
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