Elements of Integral Electronics
| 期 | 标题 | 文件 | |
| 卷 52, 编号 15 (2018) | A Physical Model of an SOI Field-Effect Hall Sensor |
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| Korolev M., Pavlyuk M., Devlikanova S. | |||
| 卷 52, 编号 15 (2018) | Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests |
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| Sergeev V., Frolov I., Shirokov A., Radaev O. | |||
| 卷 52, 编号 15 (2018) | Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy |
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| Iusipova I. | |||
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