| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
|
| Volume 50, Nº 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires |
|
| Volume 51, Nº 1 (2017) |
Physics of Semiconductor Devices |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
| Volume 51, Nº 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies |
|
| Volume 52, Nº 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
|
| Volume 52, Nº 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices |
|
| Volume 53, Nº 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition |
|
