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卷 52, 编号 11 (2018)
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers
Kozlov D., Rumyantsev V., Morozov S., Kadykov A., Fadeev M., Hübers H., Gavrilenko V.
PDF
(Eng)
卷 53, 编号 16 (2019)
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
Sakharov A., Kaliteevskii M., Voznyuk G., Levitskii I., Mitrofanov M., Tsatsulnikov A., Lundin W., Rodin S., Usov S., Evtikhiev V.
PDF
(Eng)
卷 52, 编号 9 (2018)
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser
Shkumbatjuk P.
PDF
(Eng)
卷 53, 编号 12 (2019)
Edge Doping in Graphene Devices on SiO2 Substrates
Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
PDF
(Eng)
卷 52, 编号 9 (2018)
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions
Okulich E., Okulich V., Tetelbaum D.
PDF
(Eng)
卷 53, 编号 11 (2019)
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Levitskii Y., Mitrofanov M., Voznyuk G., Nikolayev D., Mizerov M., Evtikhiev V.
PDF
(Eng)
卷 53, 编号 11 (2019)
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
Cherkova S., Skuratov V., Volodin V.
PDF
(Eng)
卷 53, 编号 9 (2019)
Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure
Zabavichev I., Potehin A., Puzanov A., Obolenskiy S., Kozlov V.
PDF
(Eng)
卷 53, 编号 9 (2019)
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures
Kozlov D., Rumyantsev V., Morozov S.
PDF
(Eng)
卷 52, 编号 12 (2018)
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
Kozlovski V., Lebedev A., Davydovskaya K., Lyubimova Y.
PDF
(Eng)
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