Edge Doping in Graphene Devices on SiO2 Substrates


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Abstract

The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt pn junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

About the authors

G. Yu. Vasilyeva

Ioffe Institute

Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021

D. Smirnov

Institut für Festkórperphysik, Lebniz Universitat Hannover

Email: a_greshnov@hotmail.ru
Germany, Hannover, D-30167

Yu. B. Vasilyev

Ioffe Institute

Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021

A. A. Greshnov

Ioffe Institute

Author for correspondence.
Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021

R. J. Haug

Institut für Festkórperphysik, Lebniz Universitat Hannover

Email: a_greshnov@hotmail.ru
Germany, Hannover, D-30167

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