Edge Doping in Graphene Devices on SiO2 Substrates
- Авторлар: Vasilyeva G.Y.1, Smirnov D.2, Vasilyev Y.B.1, Greshnov A.A.1, Haug R.J.2
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Мекемелер:
- Ioffe Institute
- Institut für Festkórperphysik, Lebniz Universitat Hannover
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1672-1676
- Бөлім: Carbon Systems
- URL: https://journal-vniispk.ru/1063-7826/article/view/207400
- DOI: https://doi.org/10.1134/S1063782619160292
- ID: 207400
Дәйексөз келтіру
Аннотация
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
Негізгі сөздер
Авторлар туралы
G. Vasilyeva
Ioffe Institute
Email: a_greshnov@hotmail.ru
Ресей, St. Petersburg, 194021
D. Smirnov
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
Германия, Hannover, D-30167
Yu. Vasilyev
Ioffe Institute
Email: a_greshnov@hotmail.ru
Ресей, St. Petersburg, 194021
A. Greshnov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: a_greshnov@hotmail.ru
Ресей, St. Petersburg, 194021
R. Haug
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
Германия, Hannover, D-30167
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