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Volume 52, Nº 10 (2018)
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A., Wolfson A., Mokhov E.
PDF
(Eng)
Volume 52, Nº 16 (2018)
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A., Mobtakeri S., Gür E., Elagoz S.
PDF
(Eng)
Volume 53, Nº 15 (2019)
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S., Sokolov E., Statsenko V., Romashkin A., Timoshenkov S.
PDF
(Eng)
Volume 53, Nº 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Volume 53, Nº 9 (2019)
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S., Vikhrova O., Zvonkov B., Zubkov S., Kriukov R., Nezhdanov A., Pavlov D., Pashen’kin I., Sushkov A.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
PDF
(Eng)
Volume 50, Nº 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
Volume 53, Nº 14 (2019)
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I., Davydov V., Smirnov A., Nestoklon M., Dementev P., Lebedev S., Lebedev A., Zubov A., Mathew S., Pezoldt J., Bokai K., Usachov D.
PDF
(Eng)
Volume 53, Nº 9 (2019)
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A., Timoshnev S., Nikitina E., Sobolev M., Shubin K., Berezovskaia T., Mokhov D., Lundin W., Nikolaev A., Bouravleuv A.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
PDF
(Eng)
Volume 50, Nº 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.
PDF
(Eng)
Volume 53, Nº 12 (2019)
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
Levin R., Vlasov A., Smirnov A., Pushnyi B.
PDF
(Eng)
Volume 53, Nº 9 (2019)
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Emelyanov E., Preobrazhenskii V., Gutakovskii A., Shamirzaev T.
PDF
(Eng)
Volume 52, Nº 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
Volume 53, Nº 11 (2019)
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V., Jmerik V., Roginskii E., Kitaev Y., Beltukov Y., Smirnov M., Nechaev D., Smirnov A., Eliseyev I., Brunkov P., Ivanov S.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
PDF
(Eng)
Volume 53, Nº 11 (2019)
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis G., Levin R., Marichev A., Pushnyi B., Scheglov M., Ber B., Kazantsev D., Kudriavtsev Y., Vlasov A., Popova T., Chistyakov D., Kuchinskii V., Vasil’ev V.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Sorokin S., Avdienko P., Sedova I., Kirilenko D., Yagovkina M., Smirnov A., Davydov V., Ivanov S.
PDF
(Eng)
Volume 52, Nº 10 (2018)
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M., Evstropov V., Mintairov S., Salii R., Shvarts M., Kalyuzhnyy N.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Selective Epitaxy of Submicron GaN Structures
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Mitrofanov M., Levitskii I., Voznyuk G., Evtikhiev V.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B., Lobanov D., Krasil’nikova L., Bushuykin P., Yablonskiy A., Novikov A., Davydov V., Yunin P., Kalinnikov M., Skorohodov E., Krasil’nik Z.
PDF
(Eng)
Volume 53, Nº 8 (2019)
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Mizerov A., Arsentyev I., Leiste H., Rinke M.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
Agekyan V., Chukeev M., Karczewski G., Serov A., Filosofov N., Reznitsky A.
PDF
(Eng)
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