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Том 52, № 16 (2018)
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A., Mobtakeri S., Gür E., Elagoz S.
PDF
(Eng)
Том 53, № 15 (2019)
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S., Sokolov E., Statsenko V., Romashkin A., Timoshenkov S.
PDF
(Eng)
Том 52, № 10 (2018)
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V.
PDF
(Eng)
Том 52, № 9 (2018)
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A., Wolfson A., Mokhov E.
PDF
(Eng)
Том 53, № 16 (2019)
Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
Agekyan V., Chukeev M., Karczewski G., Serov A., Filosofov N., Reznitsky A.
PDF
(Eng)
Том 53, № 10 (2019)
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Yurasov D., Baidakova N., Verbus V., Gusev N., Mashin A., Morozova E., Nezhdanov A., Novikov A., Skorohodov E., Shengurov D., Yablonskiy A.
PDF
(Eng)
Том 51, № 13 (2017)
Specific Features of Vapor–Liquid–Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment
Zimin S., Gorlachev E., Mokrov D., Amirov I., Gremenok V., Ivanov V.
PDF
(Eng)
Том 53, № 9 (2019)
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality
Khrebtov A., Reznik R., Ubyivovk E., Litvin A., Skurlov I., Parfenov P., Kulagina A., Danilov V., Cirlin G.
PDF
(Eng)
Том 52, № 15 (2018)
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M., Kotkov A., Ivanov V., Rad’kov Y., Svinkov N., Artemov A., Gribov B.
PDF
(Eng)
Том 51, № 13 (2017)
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy
Sokolov E., Fedotov S., Statsenko V., Timoshenkov S., Emelyanov A.
PDF
(Eng)
Том 53, № 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Том 53, № 9 (2019)
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S., Vikhrova O., Zvonkov B., Zubkov S., Kriukov R., Nezhdanov A., Pavlov D., Pashen’kin I., Sushkov A.
PDF
(Eng)
Том 52, № 12 (2018)
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
PDF
(Eng)
Том 50, № 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
Том 53, № 14 (2019)
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I., Davydov V., Smirnov A., Nestoklon M., Dementev P., Lebedev S., Lebedev A., Zubov A., Mathew S., Pezoldt J., Bokai K., Usachov D.
PDF
(Eng)
Том 53, № 9 (2019)
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A., Timoshnev S., Nikitina E., Sobolev M., Shubin K., Berezovskaia T., Mokhov D., Lundin W., Nikolaev A., Bouravleuv A.
PDF
(Eng)
Том 52, № 11 (2018)
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kotlyar K., Ilkiv I., Soshnikov I., Kirilenko D., Kryzhanovskaya N.
PDF
(Eng)
Том 50, № 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.
PDF
(Eng)
Том 53, № 12 (2019)
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
Levin R., Vlasov A., Smirnov A., Pushnyi B.
PDF
(Eng)
Том 53, № 9 (2019)
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
Abramkin D., Petrushkov M., Putyato M., Semyagin B., Emelyanov E., Preobrazhenskii V., Gutakovskii A., Shamirzaev T.
PDF
(Eng)
Том 52, № 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
PDF
(Eng)
Том 50, № 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
Том 53, № 11 (2019)
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V., Jmerik V., Roginskii E., Kitaev Y., Beltukov Y., Smirnov M., Nechaev D., Smirnov A., Eliseyev I., Brunkov P., Ivanov S.
PDF
(Eng)
Том 53, № 8 (2019)
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
PDF
(Eng)
Том 53, № 11 (2019)
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis G., Levin R., Marichev A., Pushnyi B., Scheglov M., Ber B., Kazantsev D., Kudriavtsev Y., Vlasov A., Popova T., Chistyakov D., Kuchinskii V., Vasil’ev V.
PDF
(Eng)
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