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卷 50, 编号 3 (2016)
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers
Yugov A., Malahov S., Donskov A., Duhnovskii M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
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(Eng)
卷 53, 编号 12 (2019)
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
Levin R., Vlasov A., Smirnov A., Pushnyi B.
PDF
(Eng)
卷 52, 编号 10 (2018)
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
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(Eng)
卷 50, 编号 3 (2016)
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Kyuregyan A.
PDF
(Eng)
卷 53, 编号 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
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(Eng)
卷 50, 编号 5 (2016)
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
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(Eng)
卷 50, 编号 2 (2016)
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Tikhomirov V., Zemlyakov V., Volkov V., Parnes Y., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., Ustinov V.
PDF
(Eng)
卷 52, 编号 12 (2018)
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
Ilin A., Matsukatova A., Forsh P., Vygranenko Y.
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(Eng)
卷 50, 编号 5 (2016)
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V., Dubinov A., Kudryavtsev K., Yunin P., Drozdov M., Vikhrova O., Nekorkin S., Zvonkov B.
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(Eng)
卷 50, 编号 2 (2016)
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
Aleksandrov I., Zhuravlev K., Mansurov V.
PDF
(Eng)
卷 52, 编号 12 (2018)
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I., Nekorkin S., Zvonkov B., Aleshkin V., Dubinov A., Pashenkin I., Dikareva N., Chigineva A.
PDF
(Eng)
卷 50, 编号 4 (2016)
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
PDF
(Eng)
卷 52, 编号 12 (2018)
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
PDF
(Eng)
卷 50, 编号 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
PDF
(Eng)
卷 52, 编号 11 (2018)
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut
Drozdov Y., Khrikin O., Yunin P.
PDF
(Eng)
卷 50, 编号 4 (2016)
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
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(Eng)
卷 52, 编号 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P., Drozdov Y., Khrykin O., Grigoryev V.
PDF
(Eng)
卷 50, 编号 3 (2016)
Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume
Belyaev A., Antipov V., Rubets V.
PDF
(Eng)
卷 53, 编号 12 (2019)
Edge Doping in Graphene Devices on SiO2 Substrates
Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
PDF
(Eng)
卷 52, 编号 10 (2018)
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films
Ryaguzov A., Nemkayeva R., Guseinov N.
PDF
(Eng)
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