Іздеу

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Том 52, № 9 (2018)
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser
Shkumbatjuk P.
PDF
(Eng)
Том 50, № 2 (2016)
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A., Murin D., Pivovarenok S.
PDF
(Eng)
Том 53, № 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Том 53, № 13 (2019)
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation
Patel S., Kumar D., Chaurasiya N., Tripathi S.
PDF
(Eng)
Том 50, № 3 (2016)
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms
Peleshchak R., Lazurchak I., Kuzyk O., Dan’kiv O., Zegrya G.
PDF
(Eng)
Том 53, № 15 (2019)
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature
Gadzhiev T., Aliev M., Asvarov A., Gadzhieva R., Bilalov B., Ismailov A., Shomakhov Z.
PDF
(Eng)
Том 53, № 10 (2019)
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N., Gutkin A., Brunkov P.
PDF
(Eng)
Том 50, № 5 (2016)
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
Il’inskaya N., Karandashev S., Karpukhina N., Lavrov A., Matveev B., Remennyi M., Stus N., Usikova A.
PDF
(Eng)
Том 50, № 3 (2016)
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
PDF
(Eng)
Том 53, № 15 (2019)
State of the Surface of Polycrystalline Silver after Exposure to Activated Oxygen
Ashkhotov O., Khubezhov S., Ashkhotova I.
PDF
(Eng)
Том 53, № 9 (2019)
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes
Ikonnikov A., Chernichkin V., Dudin V., Akopian D., Akimov A., Klimov A., Tereshchenko O., Ryabova L., Khokhlov D.
PDF
(Eng)
Том 50, № 5 (2016)
Atomic steps on an ultraflat Si(111) surface upon sublimation
Sitnikov S., Latyshev A., Kosolobov S.
PDF
(Eng)
Том 50, № 2 (2016)
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
PDF
(Eng)
Том 53, № 14 (2019)
Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation
Goncharov V., Kozadaev K., Mikitchuk A., Puzyrev M.
PDF
(Eng)
Том 53, № 9 (2019)
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion
Klimov A., Akimov A., Akhundov I., Golyashov V., Gorshkov D., Ishchenko D., Sidorov G., Suprun S., Tarasov A., Epov V., Tereshchenko O.
PDF
(Eng)
Том 50, № 5 (2016)
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
Alpatov A., Vikhrov S., Kazanskii A., Lyaskovskii V., Rybin N., Rybina N., Forsh P.
PDF
(Eng)
Том 50, № 2 (2016)
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
PDF
(Eng)
Том 53, № 14 (2019)
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates
Timoshnev S., Mizerov A., Lapushkin M., Kukushkin S., Bouravleuv A.
PDF
(Eng)
Том 53, № 8 (2019)
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation
Blokhin S., Kulagina M., Guseva Y., Mintairov S., Kalyuzhnyy N., Mozharov A., Zubov F., Maximov M., Zhukov A., Moiseev E., Kryzhanovskaya N.
PDF
(Eng)
Том 50, № 4 (2016)
Simulation of the real efficiencies of high-efficiency silicon solar cells
Sachenko A., Skrebtii A., Korkishko R., Kostylyov V., Kulish N., Sokolovskyi I.
PDF
(Eng)
Том 50, № 2 (2016)
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
Ryabtsev S., Chuvenkova O., Kannykin S., Popov A., Ryabtseva N., Voischev S., Turishchev S., Domashevskaya E.
PDF
(Eng)
Том 53, № 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
Том 53, № 14 (2019)
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V., Kalinovskii V., Kontrosh E., Makarevskaya E.
PDF
(Eng)
Том 52, № 16 (2018)
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
PDF
(Eng)
Том 50, № 4 (2016)
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells
Kosyachenko L., Lytvynenko V., Maslyanchuk O.
PDF
(Eng)
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