电邮这篇文章 Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures
- 作者: Kabalnov Y.A.1, Trufanov A.N.1, Obolensky S.V.2
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隶属关系:
- Sedakov Scientific Research Institute of Measurement Systems
- Lobachevsky University of Nizhny Novgorod
- 期: 卷 53, 编号 3 (2019)
- 页面: 368-374
- 栏目: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/205867
- DOI: https://doi.org/10.1134/S1063782619030084
- ID: 205867
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详细
The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.
作者简介
Yu. Kabalnov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Trufanov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
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