Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures
- Авторы: Kabalnov Y.A.1, Trufanov A.N.1, Obolensky S.V.2
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Учреждения:
- Sedakov Scientific Research Institute of Measurement Systems
- Lobachevsky University of Nizhny Novgorod
- Выпуск: Том 53, № 3 (2019)
- Страницы: 368-374
- Раздел: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/205867
- DOI: https://doi.org/10.1134/S1063782619030084
- ID: 205867
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Аннотация
The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.
Об авторах
Yu. Kabalnov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
A. Trufanov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky University of Nizhny Novgorod
Автор, ответственный за переписку.
Email: obolensk@rf.unn.ru
Россия, Nizhny Novgorod, 603950
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