Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures

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详细

Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of S = 10.2 and 12.2 mm2 and 4 cm2 are fabricated and studied. For photocells with S = 10.2 mm2, the monochromatic efficiency (η) was 60% at a current density of 5.9 A/cm2. A photovoltaic module with a working voltage of 4 V (η = 56.3% at 0.34 A/cm2) is assembled.

作者简介

V. Khvostikov

Ioffe Physical–Technical Institute

编辑信件的主要联系方式.
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Kalyuzhnyy

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

S. Mintairov

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

S. Sorokina

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Potapovich

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Emelyanov

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Timoshina

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Andreev

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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