Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields


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Аннотация

The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.

Авторлар туралы

A. Veinger

Ioffe Physical–Technical Institute

Хат алмасуға жауапты Автор.
Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021

T. Tisnek

Ioffe Physical–Technical Institute

Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021

I. Kochman

Ioffe Physical–Technical Institute

Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021

V. Okulov

Mikheev Institute of Metal Physics

Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, Yekaterinburg, 620137

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