Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
- Авторлар: Veinger A.I.1, Tisnek T.V.1, Kochman I.V.1, Okulov V.I.2
-
Мекемелер:
- Ioffe Physical–Technical Institute
- Mikheev Institute of Metal Physics
- Шығарылым: Том 51, № 2 (2017)
- Беттер: 163-167
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/199415
- DOI: https://doi.org/10.1134/S1063782617020233
- ID: 199415
Дәйексөз келтіру
Аннотация
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
Авторлар туралы
A. Veinger
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021
T. Tisnek
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Kochman
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics
Email: Anatoly.Veinger@mail.ioffe.ru
Ресей, Yekaterinburg, 620137
Қосымша файлдар
