Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
- Авторы: Veinger A.I.1, Tisnek T.V.1, Kochman I.V.1, Okulov V.I.2
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Учреждения:
- Ioffe Physical–Technical Institute
- Mikheev Institute of Metal Physics
- Выпуск: Том 51, № 2 (2017)
- Страницы: 163-167
- Раздел: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/199415
- DOI: https://doi.org/10.1134/S1063782617020233
- ID: 199415
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Аннотация
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
Об авторах
A. Veinger
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: Anatoly.Veinger@mail.ioffe.ru
Россия, St. Petersburg, 194021
T. Tisnek
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Kochman
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics
Email: Anatoly.Veinger@mail.ioffe.ru
Россия, Yekaterinburg, 620137
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