Enviar artigo por via de e-mail Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films
- Autores: Klimov A.E.1, Epov V.S.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 50, Nº 11 (2016)
- Páginas: 1479-1487
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journal-vniispk.ru/1063-7826/article/view/198380
- DOI: https://doi.org/10.1134/S1063782616110130
- ID: 198380
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Resumo
The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field B ≤ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at T = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 102–104 or greater. A qualitative model of the results obtained is considered.
Sobre autores
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: epov@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: epov@isp.nsc.ru
Rússia, Novosibirsk, 630090
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