Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films


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The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field B ≤ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at T = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 102–104 or greater. A qualitative model of the results obtained is considered.

作者简介

A. Klimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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