Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
- 作者: Veinger A.I.1, Tisnek T.V.1, Kochman I.V.1, Okulov V.I.2
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隶属关系:
- Ioffe Physical–Technical Institute
- Mikheev Institute of Metal Physics
- 期: 卷 51, 编号 2 (2017)
- 页面: 163-167
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/199415
- DOI: https://doi.org/10.1134/S1063782617020233
- ID: 199415
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详细
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
作者简介
A. Veinger
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
T. Tisnek
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Kochman
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics
Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, Yekaterinburg, 620137
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