Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields


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The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.

作者简介

A. Veinger

Ioffe Physical–Technical Institute

编辑信件的主要联系方式.
Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

T. Tisnek

Ioffe Physical–Technical Institute

Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

I. Kochman

Ioffe Physical–Technical Institute

Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Okulov

Mikheev Institute of Metal Physics

Email: Anatoly.Veinger@mail.ioffe.ru
俄罗斯联邦, Yekaterinburg, 620137

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