电邮这篇文章 On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
- 作者: Vasileva G.Y.1, Vasilyev Y.B.1, Novikov S.N.2, Danilov S.N.3, Ganichev S.D.3
-
隶属关系:
- Ioffe Institute
- Micro and Nanoscience Laboratory
- Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
- 期: 卷 52, 编号 8 (2018)
- 页面: 1077-1081
- 栏目: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/203928
- DOI: https://doi.org/10.1134/S1063782618080225
- ID: 203928
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
作者简介
G. Vasileva
Ioffe Institute
Email: yu.vasilyev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Vasilyev
Ioffe Institute
编辑信件的主要联系方式.
Email: yu.vasilyev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Novikov
Micro and Nanoscience Laboratory
Email: yu.vasilyev@mail.ioffe.ru
芬兰, Espoo, 02150
S. Danilov
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
德国, Regensburg, D-380106
S. Ganichev
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
德国, Regensburg, D-380106
补充文件
