On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes
- 作者: Davydov S.Y.1
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隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 5 (2019)
- 页面: 699-702
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/206211
- DOI: https://doi.org/10.1134/S106378261905004X
- ID: 206211
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详细
Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.
作者简介
S. Davydov
Ioffe Institute
编辑信件的主要联系方式.
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
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