Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation
- Авторлар: Blokhin S.A.1, Kulagina M.M.1, Guseva Y.A.1, Mintairov S.A.2,1, Kalyuzhnyy N.A.2,1, Mozharov A.M.2, Zubov F.I.2, Maximov M.V.2, Zhukov A.E.2,3, Moiseev E.I.2, Kryzhanovskaya N.V.2,3
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Мекемелер:
- Ioffe Institute
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 53, № 8 (2019)
- Беттер: 1099-1103
- Бөлім: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/206658
- DOI: https://doi.org/10.1134/S1063782619080220
- ID: 206658
Дәйексөз келтіру
Аннотация
Microdisk lasers 10–30 μm in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid dimensionality—quantum wells–dots—are investigated. High-frequency measurements of the microlaser response are performed in the direct small-signal modulation mode, which makes it possible to establish the parameters of the operating speed and analyze their dependence on the microlaser diameter. It is found that the K factor is (0.8 ± 0.2) ns, which corresponds to optical losses of ~6 cm–1, and no regular dependence on the diameter is observed. It is found that the low-frequency component of the damping coefficient of relaxation oscillations is inversely proportional to the diameter. This character of the dependence evidences a decrease in the carrier lifetime in small-diameter microcavities, which can be associated with the prevalence of nonradiative recombination on their side walls.
Негізгі сөздер
Авторлар туралы
S. Blokhin
Ioffe Institute
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
M. Kulagina
Ioffe Institute
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
Yu. Guseva
Ioffe Institute
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
S. Mintairov
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
N. Kalyuzhnyy
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Mozharov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
F. Zubov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
M. Maximov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
A. Zhukov
St. Petersburg National Research Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Хат алмасуға жауапты Автор.
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
E. Moiseev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021
N. Kryzhanovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
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