电邮这篇文章 Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
- 作者: Cherkova S.G.1, Skuratov V.A.2,3,4, Volodin V.A.1,5
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隶属关系:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Joint Institute for Nuclear Research
- National Research Nuclear University “MEPhI”
- Dubna State University
- Novosibirsk State University
- 期: 卷 53, 编号 11 (2019)
- 页面: 1427-1430
- 栏目: Spectroscopy, Interaction with Radiation
- URL: https://journal-vniispk.ru/1063-7826/article/view/207260
- DOI: https://doi.org/10.1134/S1063782619110046
- ID: 207260
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详细
The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
作者简介
S. Cherkova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: cherkova@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Skuratov
Joint Institute for Nuclear Research; National Research Nuclear University “MEPhI”; Dubna State University
Email: cherkova@isp.nsc.ru
俄罗斯联邦, Dubna, Moscow region, 141980; Moscow, 115409; Dubna, Moscow region, 141982
V. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: cherkova@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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