| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 58, № 3 (2016) |
Surface Physics and Thin Films |
Epitaxial growth of cadmium sulfide films on silicon |
|
| Том 58, № 4 (2016) |
Phase Transitions |
Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon |
|
| Том 58, № 5 (2016) |
Ferroelectricity |
Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate |
|
| Том 58, № 5 (2016) |
Impurity Centers |
Elastic interaction of point defects in cubic and hexagonal crystals |
|
| Том 58, № 7 (2016) |
Surface Physics and Thin Films |
Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates |
|
| Том 58, № 9 (2016) |
Surface Physics and Thin Films |
Epitaxial gallium oxide on a SiC/Si substrate |
|
| Том 58, № 10 (2016) |
Semiconductors |
Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy |
|
| Том 59, № 1 (2017) |
Semiconductors |
Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide |
|
| Том 59, № 2 (2017) |
Surface Physics and Thin Films |
Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer |
|
| Том 59, № 4 (2017) |
Semiconductors |
Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates |
|
| Том 59, № 4 (2017) |
Phase Transitions |
Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide |
|
| Том 59, № 5 (2017) |
Surface Physics, Thin Films |
X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method |
|
| Том 59, № 6 (2017) |
Surface Physics and Thin Films |
A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon |
|
| Том 59, № 12 (2017) |
Optical Properties |
IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide |
|
| Том 60, № 3 (2018) |
Semiconductors |
Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer |
|
| Том 60, № 5 (2018) |
Semiconductors |
Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates |
|
| Том 60, № 9 (2018) |
Polymers |
Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution |
|
| Том 60, № 10 (2018) |
Phase Transitions |
A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman Spectra |
|
| Том 61, № 3 (2019) |
Semiconductors |
Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide |
|
| Том 61, № 3 (2019) |
Semiconductors |
Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution |
|
| Том 61, № 3 (2019) |
Surface Physics and Thin Films |
Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution |
|
| Том 61, № 8 (2019) |
Semiconductors |
Techniques for Polytypic Transformations in Silicon Carbide |
|
| Том 61, № 12 (2019) |
Article |
International Conference “Mechanisms and Nonlinear Problems of Nucleation and Growth of Crystals and Thin Films” Dedicated to the Memory of Professor V.V. Slezov, an Outstanding Theoretical Physicist |
|
| Том 61, № 12 (2019) |
Semiconductors |
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates |
|
| Том 61, № 12 (2019) |
Semiconductors |
Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy |
|
| Том 61, № 12 (2019) |
Semiconductors |
Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution |
|
| Том 61, № 12 (2019) |
Semiconductors |
Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers |
|
| Том 61, № 12 (2019) |
Semiconductors |
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal |
|
| Том 61, № 12 (2019) |
Semiconductors |
A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates |
|
| Том 61, № 12 (2019) |
Ferroelectricity |
Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films |
|
| Том 61, № 12 (2019) |
Low-Dimensional Systems |
Aromatic-Like Carbon Nanostructures Created on the Vicinal SiC Surfaces |
|
