| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 58, № 11 (2016) |
Magnetism |
Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing |
|
| Том 59, № 11 (2017) |
Semiconductors |
Modification of the properties of ferromagnetic layers based on A3B5 compounds by pulsed laser annealing |
|
| Том 59, № 11 (2017) |
Semiconductors |
Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/δ〈Mn〉 heterostructures |
|
| Том 59, № 11 (2017) |
Optical Properties |
Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer |
|
| Том 59, № 11 (2017) |
Surface Physics, Thin Films |
Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature |
|
| Том 60, № 5 (2018) |
Magnetism |
Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition |
|
| Том 60, № 11 (2018) |
Semiconductors |
The Study of Features of Formation and Properties of A3B5 Semiconductors Highly Doped with Iron |
|
| Том 60, № 11 (2018) |
Semiconductors |
Raising the Operating Temperature of (Ga,Mn)As/GaAs Spin Light Emitting Diodes by Applying Post-Growth Treatment |
|
| Том 61, № 3 (2019) |
Magnetism |
Phase Separation in (Ga,Mn)As Layers Obtained by Ion Implantation and Subsequent Laser Annealing |
|
| Том 61, № 9 (2019) |
Magnetism |
Modification of Magnetic Properties of a CoPt Alloy by Ion Irradiation |
|
