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The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits
- Authors: Chumakov A.I.1
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Affiliations:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow JSC Specialized Electronic Systems
- Issue: Vol 53, No 2 (2024)
- Pages: 156-161
- Section: МОДЕЛИРОВАНИЕ
- URL: https://journal-vniispk.ru/0544-1269/article/view/262706
- DOI: https://doi.org/10.31857/S0544126924020047
- ID: 262706
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Abstract
The model is proposed to explain the effects of low dose rate under the radiation influence in bipolar structures, taking into account the effects of subthreshold displacement in high-doped silicon layers. The base current degradation of bipolar transistor is determined of surface and displacement radiation effects in the near-surface base area. The conditions for the enhanced low dose rate sensitivity (ELDRS) in bipolar structures are shown. The presented results of the analysis allow us to explain most of the observed experimental results.
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About the authors
A. I. Chumakov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow JSC Specialized Electronic Systems
Author for correspondence.
Email: aichum@spels.ru
Russian Federation, Moscow
References
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Fig. 1. Formation of subthreshold radiation defects in the highly doped region of the emitter: 1 – diffusion of primary RDs; 2 – creation of stable RDs; 3 – annihilation of primary RDs; ⚫ – interstitial site; ◯ – vacancy; ⊕ – nucleus of an atom of the crystal lattice.
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Fig. 2. Changes in the average concentration of primary RD at different irradiation intensities for a sensitive region with a width of 0.2 μm
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Fig. 3. Changes in the distribution profiles of primary RDs at the end of irradiation for different intensities.
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Fig. 4. Possible changes in the increment of the total base current with different ratios between its components.
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Fig. 5. Comparison of calculated and experimental values of changes in the base current during irradiation with different intensities: a – input current of the operational amplifier LM108A; b – input current of the comparator LM111, irradiation at T = 90°C [5].
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