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The Effect оf Laser Radiation оn Functional Properties of MOS Structures
- Authors: Rekhviashvili S.S.1, Gaev D.S.2
-
Affiliations:
- Institute of Applied Mathematics and Automation KBSC RAS
- Kabardino-Balkarian State University
- Issue: Vol 53, No 3 (2024)
- Pages: 274-282
- Section: ПРИБОРЫ
- URL: https://journal-vniispk.ru/0544-1269/article/view/267573
- DOI: https://doi.org/10.31857/S0544126924030093
- ID: 267573
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Abstract
The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.
About the authors
S. Sh. Rekhviashvili
Institute of Applied Mathematics and Automation KBSC RAS
Author for correspondence.
Email: rsergo@mail.ru
Russian Federation, Nalchik
D. S. Gaev
Kabardino-Balkarian State University
Email: rsergo@mail.ru
Russian Federation, Nalchik
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