Investigation of double patterning method with the usage of antispacer

E. D. Tikhonova; Тихонова Е. Д.; E. S. Gornev; Горнев Е. С.

doi:10.31857/S0544126925010017

Investigation of double patterning method with the usage of antispacer

Авторлар: Tikhonova E.D.¹, Gornev E.S.¹
Мекемелер:
1. JSC “MERI”
Шығарылым: Том 54, № 1 (2025)
Беттер: 3-8
Бөлім: ЛИТОГРАФИЯ
URL: https://journal-vniispk.ru/0544-1269/article/view/294458
DOI: https://doi.org/10.31857/S0544126925010017
EDN: https://elibrary.ru/GILVCD
ID: 294458

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Әдебиет тізімі
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Аннотация

In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.

Негізгі сөздер

multipatterning, self-aligned double patterning, antispacer, positive resist with chemical enhancement, EUV

Толық мәтін

Авторлар туралы

E. Tikhonova

JSC “MERI”

Хат алмасуға жауапты Автор.
Email: etikhonova@niime.ru
Ресей, Moscow

E. Gornev

JSC “MERI”

Email: egornev@niime.ru
Ресей, Moscow

Әдебиет тізімі

Krasnikov G.Ya. Potential of microelectronic technologies with topological dimensions less than 5 nm // Nanoindustry. 2020. V. 13. No. S5-1(102). P. 13–19.
Kelleher A.B. Evolution of advanced lithography and patterning in the system technology co-optimization era of Moore’s law // Optical and EUV Nanolithography XXXVII. 2024. V. PC12953. P. PC1295302.
Mansfield E., Barnes B., Kline R., Vladar A., Obeng Y., Davydov A. International roadmap for devices and systems 2023 edition metrology, International Roadmap for Devices and Systems ( ${IRDS}^{™}$ ) // [online]. 2024. https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956664.
Santaclara J. G., Peeters R., Ballegoij R., Lok S., Schoot J., Graeupner P., Kuerz P., Mallmann J., Storms G., Vanoppen P. The next step in Moore’s law: high-NA EUV introduction at the customer // Optical and EUV Nanolithography XXXVII. 2024. V. 12953. P. 129530P.
Kroshilin I.S. Approaches to the Creation of a Lithograph for Russian Enterprises in the Context of Import Substitution // Information Exchange in Interdisciplinary Research III. The View of Young Scientists: Special Collection of Proceedings of the All-Russian Scientific and Practical Conference with International Participation. 2023. P. 8–12.
Gushchin O.P. Some Aspects of Self-Aligned Patterning in Immersion Lithography // Electronic Engineering. Series 3: Microelectronics. 2018. No. 1(169). P. 42–53.
Tikhonova E.D. Study of the Fin-layer Process Window in the Process of Self-Aligned Double Patterning // Nanoindustry. 2024. V. 17. No. S10-1(128). P. 205–207.
Tikhonova E.D. Use of Spin-on-Carbon Material to Improve the Self-Aligned Double Patterning Method // Nanoindustry. 2020. V. 13. No. S5-3(102). P. 859–861.
Hyatt M., Housley R., Villiers A. Antispacer process and semiconductor structure generated by the antispacer process // Pattent US: US 2014/0054756A1. 02/27/2014.
Hyatt M., Huang K., DeVilliers A., Slezak M., Liu Z. Anti-spacer double patterning // Advances in Patterning Materials and Processes XXXI. 2014. V. 9051. P. 905118.
Hassaan M., Saleem U., Singh A., Haque A.J., Wang K. Recent Advances in Positive Photoresists: Mechanisms and Fabrication // Materials. 2024. V. 17. P. 2552.
Litavrin M.V. Extraction of empirical constants of exposure and post-exposure drying for chemically enhanced photoresists // Nanoindustry. 2024. V. 17. No. S10-2(128). P. 710–718.
Murphy M., Dobson J., Grzeskowiak J., Power D., Cutler C.A., Weloth A., Conklin D. Breaching high-NA EUV dimensions with 193i anti-spacer multipatterning // Advances in Patterning Materials and Processes XLI. 2024. V. 12957. P. 1295711.

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Әрекет

1. JATS XML

Жүктеу

2. Fig. 1. Roadmap for the development of the lithographic process technology depending on the critical steps: metallization and gate [3]

Жүктеу (548KB)

Метадеректер

3. Fig. 2. Comparison of the normalized price of the lithography operation per plate depending on the technological standard [4]

Жүктеу (412KB)

Метадеректер

4. Fig. 3. Technological routes of the methods: self-aligned double lithography (SAL) using a spacer (left) and double lithography (DL) using an antispacer (right) [7, 9]