Investigation of double patterning method with the usage of antispacer
- Autores: Tikhonova E.D.1, Gornev E.S.1
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Afiliações:
- JSC “MERI”
- Edição: Volume 54, Nº 1 (2025)
- Páginas: 3-8
- Seção: ЛИТОГРАФИЯ
- URL: https://journal-vniispk.ru/0544-1269/article/view/294458
- DOI: https://doi.org/10.31857/S0544126925010017
- EDN: https://elibrary.ru/GILVCD
- ID: 294458
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Resumo
In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.
Texto integral

Sobre autores
E. Tikhonova
JSC “MERI”
Autor responsável pela correspondência
Email: etikhonova@niime.ru
Rússia, Moscow
E. Gornev
JSC “MERI”
Email: egornev@niime.ru
Rússia, Moscow
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