| 期 |
标题 |
文件 |
| 卷 53, 编号 6 (2019) |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
|
|
Banshchikov A., Illarionov Y., Vexler M., Wachter S., Sokolov N.
|
| 卷 53, 编号 9 (2019) |
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
|
|
Shengurov V., Filatov D., Denisov S., Chalkov V., Alyabina N., Zaitsev A.
|
| 卷 52, 编号 6 (2018) |
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal |
|
|
Maiboroda I., Grishchenko J., Ezubchenko I., Sokolov I., Chernych I., Andreev A., Zanaveskin M.
|
| 卷 53, 编号 16 (2019) |
Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices |
|
|
Moskalenko S., Moskalenko V., Podlesny I., Zubac I.
|
| 卷 52, 编号 16 (2018) |
Two Methods of Calculation Ternary Nanowire Composition |
|
|
Sibirev N., Koryakin A., Berdnikov Y.
|
| 卷 50, 编号 3 (2016) |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
|
|
Popov V.
|
| 卷 52, 编号 1 (2018) |
Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters |
|
|
Nikolskaia A., Vildanova M., Kozlov S., Shevaleevskiy O.
|
| 卷 51, 编号 1 (2017) |
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors |
|
|
Dubinov A., Kitayev I.
|
| 卷 53, 编号 5 (2019) |
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates |
|
|
Abramkin D., Shamirzaev T.
|
| 卷 52, 编号 7 (2018) |
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation |
|
|
Ponomarev D., Khabibullin R., Klochkov A., Yachmenev A., Bugaev A., Khusyainov D., Buriakov A., Bilyk V., Mishina E.
|
| 卷 52, 编号 1 (2018) |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
|
|
Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kakko J., Lipsanen H.
|
| 卷 53, 编号 16 (2019) |
Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming |
|
|
Chebanenko M., Zakharova N., Lobinsky A., Popkov V.
|
| 卷 52, 编号 14 (2018) |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
|
Sakharov A., Kurbanova N., Demchenko O., Sim P., Yagovkina M., Tsatsulnikov A., Usov S., Zakheim D., Zavarin E., Lundin W., Velikovskiy L.
|
| 卷 53, 编号 6 (2019) |
Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption |
|
|
Niftiyev N.
|
| 卷 52, 编号 2 (2018) |
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons |
|
|
Yafarov R.
|
| 卷 52, 编号 15 (2018) |
Using Combined Optical Techniques to Control the Shallow Etching Process |
|
|
Volokhovskiy A., Gerasimenko N., Petrakov D.
|
| 卷 51, 编号 7 (2017) |
Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development |
|
|
Mori T.
|
| 卷 50, 编号 10 (2016) |
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities |
|
|
Mezdrogina M., Vinogradov A., Kuzmin R., Levitski V., Kozanova Y., Lyanguzov N., Chukichev M.
|
| 卷 51, 编号 3 (2017) |
Valence-band offsets in strained SiGeSn/Si layers with different tin contents |
|
|
Bloshkin A., Yakimov A., Timofeev V., Tuktamyshev A., Nikiforov A., Murashov V.
|
| 卷 52, 编号 6 (2018) |
Variation in the Conductivity of Polyaniline Nanotubes During Their Formation |
|
|
Kapralova V., Sapurina I., Sudar’ N.
|
| 卷 53, 编号 5 (2019) |
Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
|
|
Seregin P., Marchenko A., Nasredinov F., Zharkoy A.
|
| 卷 51, 编号 7 (2017) |
Varistor effect in highly heterogeneous polymer–ZnO systems |
|
|
Kurbanov M., Ahadzade S., Ramazanova I., Dadashov Z., Faradzhzade I.
|
| 卷 52, 编号 11 (2018) |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
|
|
Drozdov Y., Khrikin O., Yunin P.
|
| 卷 53, 编号 10 (2019) |
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |
|
|
Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
|
| 卷 50, 编号 1 (2016) |
Vertical heterostructures based on graphene and other 2D materials |
|
|
Antonova I.
|
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