Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
- Авторы: Sobolev N.A.1, Aleksandrov O.V.2, Sakharov V.I.1, Serenkov I.T.1, Shek E.I.1, Kalyadin A.E.1, Parshin E.O.3, Melesov N.S.3
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Учреждения:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
- Выпуск: Том 53, № 2 (2019)
- Страницы: 153-155
- Раздел: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/205657
- DOI: https://doi.org/10.1134/S1063782619020222
- ID: 205657
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Аннотация
The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
Об авторах
N. Sobolev
Ioffe Institute
Автор, ответственный за переписку.
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
O. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 197376
V. Sakharov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
I. Serenkov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
E. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
A. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
E. Parshin
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Россия, Yaroslavl, 150007
N. Melesov
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Россия, Yaroslavl, 150007
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