电邮这篇文章 Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
- 作者: Sobolev N.A.1, Aleksandrov O.V.2, Sakharov V.I.1, Serenkov I.T.1, Shek E.I.1, Kalyadin A.E.1, Parshin E.O.3, Melesov N.S.3
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隶属关系:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
- 期: 卷 53, 编号 2 (2019)
- 页面: 153-155
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/205657
- DOI: https://doi.org/10.1134/S1063782619020222
- ID: 205657
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详细
The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
作者简介
N. Sobolev
Ioffe Institute
编辑信件的主要联系方式.
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
O. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 197376
V. Sakharov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
I. Serenkov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
E. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
E. Parshin
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, Yaroslavl, 150007
N. Melesov
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, Yaroslavl, 150007
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