Отправить статью по E-mail Single electron transistor: Energy-level broadening effect and thermionic contribution
- Авторы: Nasri A.1, Boubaker A.1, Khaldi W.2, Hafsi B.2, Kalboussi A.1
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Учреждения:
- University of Monastir, Microelectronics and Instrumentation laboratory
- CNRS, Centrale Lille, ISEN
- Выпуск: Том 51, № 12 (2017)
- Страницы: 1656-1660
- Раздел: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/202068
- DOI: https://doi.org/10.1134/S1063782617120144
- ID: 202068
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Аннотация
In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si–QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy–level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I–V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.
Об авторах
A. Nasri
University of Monastir, Microelectronics and Instrumentation laboratory
Автор, ответственный за переписку.
Email: abdelgafar@hotmail.fr
Тунис, Av de l’environnement, Monastir, 5019
A. Boubaker
University of Monastir, Microelectronics and Instrumentation laboratory
Email: abdelgafar@hotmail.fr
Тунис, Av de l’environnement, Monastir, 5019
W. Khaldi
CNRS, Centrale Lille, ISEN
Email: abdelgafar@hotmail.fr
Франция, Lille, 59000
B. Hafsi
CNRS, Centrale Lille, ISEN
Email: abdelgafar@hotmail.fr
Франция, Lille, 59000
A. Kalboussi
University of Monastir, Microelectronics and Instrumentation laboratory
Email: abdelgafar@hotmail.fr
Тунис, Av de l’environnement, Monastir, 5019
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