Lista de artigos

Edição Título Arquivo
Volume 51, Nº 9 (2017) High-voltage MIS-gated GaN transistors
Erofeev E., Fedin I., Fedina V., Stepanenko M., Yuryeva A.
Volume 50, Nº 3 (2016) High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Levinshtein M., Mnatsakanov T., Yurkov S., Tandoev A., Ryu S., Palmour J.
Volume 51, Nº 9 (2017) Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
Bochkareva N., Voronenkov V., Gorbunov R., Virko M., Kogotkov V., Leonidov A., Vorontsov-Velyaminov P., Sheremet I., Shreter Y.
Volume 52, Nº 14 (2018) Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions
Budkin G., Reznitsky A.
Volume 50, Nº 11 (2016) Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
Cirlin G., Shtrom I., Reznik R., Samsonenko Y., Khrebtov A., Bouravleuv A., Soshnikov I.
Volume 52, Nº 4 (2018) Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources
Cirlin G., Reznik R., Shtrom I., Khrebtov A., Samsonenko Y., Kukushkin S., Kasama T., Akopian N., Leonardo L.
Volume 53, Nº 5 (2019) Hydrogen Desorption from Pentagraphane
Openov L., Podlivaev A.
Volume 53, Nº 9 (2019) Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors
Ivchenko E., Kalevich V., Kunold A., Balocchi A., Marie X., Amand T.
Volume 50, Nº 4 (2016) Impact ionization in nonuniformly heated silicon p+nn+ and n+pp+ structures
Musaev A.
Volume 53, Nº 10 (2019) Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
Volume 52, Nº 13 (2018) Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs
Tyaginov S., Linten D., Vexler M., Hellings G., Grill A., Chasin A., Jech M., Kaczer B., Makarov A., Grasser T.
Volume 53, Nº 10 (2019) Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles
Sobolev M., Yavsin D., Gurevich S.
Volume 52, Nº 10 (2018) Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier
Torkhov N.
Volume 52, Nº 4 (2018) Impact of UV Pulsed Laser Radiation and of the Electron Flow on Dielectric States of Polymer Composite Nanomaterial Based on LDPE Matrix
Ushakov N., Kosobudskii I.
Volume 51, Nº 3 (2017) Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength
Bannaya V.
Volume 50, Nº 13 (2016) Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.
Volume 51, Nº 8 (2017) Impurity levels in Hg3In2Te6 crystals
Chupyra S., Grushka O., Bilichuk S.
Volume 51, Nº 4 (2017) In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Guseynov R., Tanriverdiyev V., Kipshidze G., Aliyeva Y., Aliguliyeva K., Abdullayev N., Mamedov N.
Volume 53, Nº 12 (2019) InxAl1 –xN Solid Solutions: Composition Stability Issues
Brudnyi V., Vilisova M., Velikovskiy L.
Volume 52, Nº 7 (2018) In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
Salii R., Kosarev I., Mintairov S., Nadtochiy A., Shvarts M., Kalyuzhnyy N.
Volume 51, Nº 5 (2017) InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD
Mintairov S., Kalyuzhnyy N., Maximov M., Nadtochiy A., Nevedomskiy V., Zhukov A.
Volume 51, Nº 7 (2017) Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
Sokolova Z., Veselov D., Pikhtin N., Tarasov I., Asryan L.
Volume 53, Nº 14 (2019) Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity
Sergaeva O., Yaroshenko V., Volkov I., Zuev D., Savelev R.
Volume 51, Nº 2 (2017) Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment
Erofeev E., Fedin I., Kutkov I., Yuryev Y.
Volume 52, Nº 14 (2018) Increasing Spin-Orbital Coupling at Relativistic Exchange Interaction of Electron-Hole Pairs in Graphene
Grushevskaya H., Krylov G.
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