| 期 |
标题 |
文件 |
| 卷 51, 编号 9 (2017) |
High-voltage MIS-gated GaN transistors |
|
|
Erofeev E., Fedin I., Fedina V., Stepanenko M., Yuryeva A.
|
| 卷 50, 编号 3 (2016) |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
|
|
Levinshtein M., Mnatsakanov T., Yurkov S., Tandoev A., Ryu S., Palmour J.
|
| 卷 51, 编号 9 (2017) |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
|
|
Bochkareva N., Voronenkov V., Gorbunov R., Virko M., Kogotkov V., Leonidov A., Vorontsov-Velyaminov P., Sheremet I., Shreter Y.
|
| 卷 52, 编号 14 (2018) |
Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions |
|
|
Budkin G., Reznitsky A.
|
| 卷 50, 编号 11 (2016) |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
|
Cirlin G., Shtrom I., Reznik R., Samsonenko Y., Khrebtov A., Bouravleuv A., Soshnikov I.
|
| 卷 52, 编号 4 (2018) |
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |
|
|
Cirlin G., Reznik R., Shtrom I., Khrebtov A., Samsonenko Y., Kukushkin S., Kasama T., Akopian N., Leonardo L.
|
| 卷 53, 编号 5 (2019) |
Hydrogen Desorption from Pentagraphane |
|
|
Openov L., Podlivaev A.
|
| 卷 53, 编号 9 (2019) |
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors |
|
|
Ivchenko E., Kalevich V., Kunold A., Balocchi A., Marie X., Amand T.
|
| 卷 50, 编号 4 (2016) |
Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures |
|
|
Musaev A.
|
| 卷 53, 编号 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
|
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
|
| 卷 52, 编号 13 (2018) |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
|
Tyaginov S., Linten D., Vexler M., Hellings G., Grill A., Chasin A., Jech M., Kaczer B., Makarov A., Grasser T.
|
| 卷 53, 编号 10 (2019) |
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles |
|
|
Sobolev M., Yavsin D., Gurevich S.
|
| 卷 52, 编号 10 (2018) |
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier |
|
|
Torkhov N.
|
| 卷 52, 编号 4 (2018) |
Impact of UV Pulsed Laser Radiation and of the Electron Flow on Dielectric States of Polymer Composite Nanomaterial Based on LDPE Matrix |
|
|
Ushakov N., Kosobudskii I.
|
| 卷 51, 编号 3 (2017) |
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength |
|
|
Bannaya V.
|
| 卷 50, 编号 13 (2016) |
Improving the functional characteristics of gallium nitride during vapor phase epitaxy |
|
|
Vigdorovich E.
|
| 卷 51, 编号 8 (2017) |
Impurity levels in Hg3In2Te6 crystals |
|
|
Chupyra S., Grushka O., Bilichuk S.
|
| 卷 51, 编号 4 (2017) |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
|
|
Guseynov R., Tanriverdiyev V., Kipshidze G., Aliyeva Y., Aliguliyeva K., Abdullayev N., Mamedov N.
|
| 卷 53, 编号 12 (2019) |
InxAl1 –xN Solid Solutions: Composition Stability Issues |
|
|
Brudnyi V., Vilisova M., Velikovskiy L.
|
| 卷 52, 编号 7 (2018) |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
|
Salii R., Kosarev I., Mintairov S., Nadtochiy A., Shvarts M., Kalyuzhnyy N.
|
| 卷 51, 编号 5 (2017) |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
|
Mintairov S., Kalyuzhnyy N., Maximov M., Nadtochiy A., Nevedomskiy V., Zhukov A.
|
| 卷 51, 编号 7 (2017) |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
|
|
Sokolova Z., Veselov D., Pikhtin N., Tarasov I., Asryan L.
|
| 卷 53, 编号 14 (2019) |
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity |
|
|
Sergaeva O., Yaroshenko V., Volkov I., Zuev D., Savelev R.
|
| 卷 51, 编号 2 (2017) |
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment |
|
|
Erofeev E., Fedin I., Kutkov I., Yuryev Y.
|
| 卷 52, 编号 14 (2018) |
Increasing Spin-Orbital Coupling at Relativistic Exchange Interaction of Electron-Hole Pairs in Graphene |
|
|
Grushevskaya H., Krylov G.
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| 551 - 575 的 1443 信息 |
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