| Edição |
Título |
Arquivo |
| Volume 50, Nº 10 (2016) |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
|
Khabibullin R., Shchavruk N., Pavlov A., Ponomarev D., Tomosh K., Galiev R., Maltsev P., Zhukov A., Cirlin G., Zubov F., Alferov Z.
|
| Volume 50, Nº 11 (2016) |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
|
|
Dorokhin M., Pavlov D., Bobrov A., Danilov Y., Lesnikov V., Zvonkov B., Zdoroveyshchev A., Kudrin A., Demina P., Usov Y., Nikolichev D., Kryukov R., Zubkov S.
|
| Volume 51, Nº 1 (2017) |
Fabrication of oxide heterostructures for promising solar cells of a new generation |
|
|
Bobkov A., Lashkova N., Maximov A., Moshnikov V., Nalimova S.
|
| Volume 52, Nº 5 (2018) |
Fabrication of Silicon Nanostructures for Application in Photonics |
|
|
Kamalieva A., Toropov N., Vartanyan T., Baranov M., Parfenov P., Bogdanov K., Zharova Y., Tolmachev V.
|
| Volume 52, Nº 8 (2018) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
|
|
Matukhin V., Pogoreltsev A., Gavrilenko A., Garkavyi S., Shmidt E., Babaeva S., Sukhanova A., Terukov E.
|
| Volume 50, Nº 5 (2016) |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
|
|
Vexler M., Grekhov I.
|
| Volume 50, Nº 7 (2016) |
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor |
|
|
Romaka V., Rogl P., Romaka V., Kaczorowski D., Stadnyk Y., Krayovskyy V., Horyn A.
|
| Volume 53, Nº 6 (2019) |
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation |
|
|
Kozhemiako A., Evseev A., Balakshin Y., Shemukhin A.
|
| Volume 50, Nº 6 (2016) |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
|
Danilov L., Petukhov A., Mikhailova M., Zegrya G., Ivanov E., Yakovlev Y.
|
| Volume 50, Nº 2 (2016) |
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements |
|
|
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
|
| Volume 53, Nº 2 (2019) |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
|
|
Shalimova M., Sachuk N.
|
| Volume 50, Nº 4 (2016) |
Features of photoinduced magnetism in some yttrium–iron-garnet single crystals |
|
|
Vorob’eva N., Mityukhlyaev V.
|
| Volume 51, Nº 2 (2017) |
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |
|
|
Romaka V., Rogl P., Romaka V., Kaczorowski D., Krayovskyy V., Stadnyk Y., Horyn A.
|
| Volume 53, Nº 4 (2019) |
Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures |
|
|
Goldman E., Levashov S., Chucheva G.
|
| Volume 50, Nº 4 (2016) |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
|
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
|
| Volume 52, Nº 13 (2018) |
Features of the Electron Mobility in the n-InSe Layered Semiconductor |
|
|
Abdinov A., Babayeva R.
|
| Volume 53, Nº 9 (2019) |
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes |
|
|
Ikonnikov A., Chernichkin V., Dudin V., Akopian D., Akimov A., Klimov A., Tereshchenko O., Ryabova L., Khokhlov D.
|
| Volume 52, Nº 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
|
Mizerov A., Timoshnev S., Sobolev M., Nikitina E., Shubina K., Berezovskaia T., Shtrom I., Bouravleuv A.
|
| Volume 53, Nº 7 (2019) |
Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides |
|
|
Orlov L., Ivina N., Bozhenkin V.
|
| Volume 53, Nº 2 (2019) |
Features of the Properties of Rare-Earth Semiconductors |
|
|
Kaminski V., Sharenkova N.
|
| Volume 52, Nº 13 (2018) |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
|
Semenov A., Nechaev D., Troshkov S., Nashchekin A., Brunkov P., Jmerik V., Ivanov S.
|
| Volume 51, Nº 11 (2017) |
Features of the selective manganese doping of GaAs structures |
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Dorokhin M., Pavlov D., Antonov I., Drozdov M., Usov Y.
|
| Volume 53, Nº 10 (2019) |
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations |
|
|
Kocharovskaya E., Mishin A., Ryabinin I., Kocharovsky V.
|
| Volume 53, Nº 4 (2019) |
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures |
|
|
Belyaev A., Boltovets N., Klad’ko V., Safryuk-Romanenko N., Lubchenko A., Sheremet V., Shynkarenko V., Slepova A., Pilipenko V., Petlitskaya T., Pilipchuk A., Konakova R., Sachenko A.
|
| Volume 53, Nº 12 (2019) |
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films |
|
|
Amasev D., Tameev A., Kazanskii A.
|
| 426 - 450 de 1443 resultados |
<< < 13 14 15 16 17 18 19 20 21 22 > >> |
