| Шығарылым |
Атауы |
Файл |
| Том 53, № 8 (2019) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
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Balakshin Y., Kozhemiako A., Petrovic S., Erich M., Shemukhin A., Chernysh V.
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| Том 51, № 2 (2017) |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
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Pyatilova O., Gavrilov S., Shilyaeva Y., Pavlov A., Shaman Y., Dudin A.
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| Том 53, № 15 (2019) |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
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Egorkin V., Zemlyakov V., Nezhentsev A., Gudkov V., Garmash V.
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| Том 52, № 16 (2018) |
Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide |
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Ushakov N., Vasil’kov M., Shaturnuy V.
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| Том 51, № 6 (2017) |
Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor |
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Mekhtiyeva S., Atayeva S., Isayev A., Zeynalov V.
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| Том 53, № 5 (2019) |
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound |
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Yapryntsev M., Vasiliev A., Ivanov O.
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| Том 53, № 4 (2019) |
Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures |
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Kalygina V., Lygdenova T., Petrova Y., Chernikov E.
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| Том 50, № 3 (2016) |
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon |
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Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
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| Том 52, № 10 (2018) |
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films |
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Ryaguzov A., Nemkayeva R., Guseinov N.
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| Том 52, № 3 (2018) |
Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films |
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Tikhii A., Nikolaenko Y., Zhikhareva Y., Kornievets A., Zhikharev I.
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| Том 51, № 8 (2017) |
Influence of traps in silicon dioxide on the breakdown of MOS structures |
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Aleksandrov O.
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| Том 53, № 6 (2019) |
Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys |
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Taranova A., Novitskii A., Voronin A., Taskaev S., Khovaylo V.
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| Том 52, № 1 (2018) |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
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Novikova N., Yakovlev V., Kucherenko I., Vinogradov V., Aleschenko Y., Muratov A., Karczewski G., Chusnutdinow S.
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| Том 53, № 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
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Nadtochiy A., Shchukin V., Cherkashin N., Denneulin T., Zhukov A., Maximov M., Gordeev N., Payusov A., Kulagina M., Shernyakov Y., Ledentsov N.
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| Том 51, № 1 (2017) |
InGaN/GaN light-emitting diode microwires of submillimeter length |
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Lundin W., Rodin S., Sakharov A., Lundina E., Usov S., Zadiranov Y., Troshkov S., Tsatsulnikov A.
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| Том 52, № 16 (2018) |
InGaN/GaN QDs Nanorods: Processing and Properties |
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Kotlyar K., Soshnikov I., Morozov I., Berezovskaya T., Kryzhanovskaya N., Kudryashov D., Lysak V.
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| Том 51, № 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
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Leshchenko E., Dubrovskii V.
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| Том 53, № 4 (2019) |
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink |
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Gorbatyuk A., Ivanov B.
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| Том 53, № 16 (2019) |
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation |
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Spirina A., Neizvestny I., Shwartz N.
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| Том 51, № 5 (2017) |
Injection-induced terahertz electroluminescence from silicon p–n structures |
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Zakhar’in A., Vasilyev Y., Sobolev N., Zabrodskii V., Egorov S., Andrianov A.
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| Том 51, № 8 (2017) |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
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Sokura L., Parkhomenko Y., Moiseev K., Nevedomsky V., Bert N.
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| Том 53, № 9 (2019) |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
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Dorokhin M., Demina P., Erofeeva I., Zdoroveyshchev A., Kuznetsov Y., Boldin M., Popov A., Lantsev E., Boryakov A.
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| Том 50, № 6 (2016) |
Inter atomic force constants of binary and ternary tetrahedral semiconductors |
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Pal S., Tiwari R., Gupta D., Saraswat V., Verma A.
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| Том 53, № 10 (2019) |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
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Morozov K., Belonovskii A., Ivanov K., Girshova E., Kaliteevski M.
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| Том 50, № 13 (2016) |
Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range |
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Atdaev A., Danilyuk A., Labunov V., Prischepa S., Pavlov A., Basaev A., Shaman Y.
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| Нәтижелер 1443 - 601/625 |
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