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Том 53, № 8 (2019) Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
Balakshin Y., Kozhemiako A., Petrovic S., Erich M., Shemukhin A., Chernysh V.
Том 51, № 2 (2017) Influence of the doping type and level on the morphology of porous Si formed by galvanic etching
Pyatilova O., Gavrilov S., Shilyaeva Y., Pavlov A., Shaman Y., Dudin A.
Том 53, № 15 (2019) Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
Egorkin V., Zemlyakov V., Nezhentsev A., Gudkov V., Garmash V.
Том 52, № 16 (2018) Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide
Ushakov N., Vasil’kov M., Shaturnuy V.
Том 51, № 6 (2017) Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor
Mekhtiyeva S., Atayeva S., Isayev A., Zeynalov V.
Том 53, № 5 (2019) Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound
Yapryntsev M., Vasiliev A., Ivanov O.
Том 53, № 4 (2019) Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
Kalygina V., Lygdenova T., Petrova Y., Chernikov E.
Том 50, № 3 (2016) Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
Том 52, № 10 (2018) Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films
Ryaguzov A., Nemkayeva R., Guseinov N.
Том 52, № 3 (2018) Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films
Tikhii A., Nikolaenko Y., Zhikhareva Y., Kornievets A., Zhikharev I.
Том 51, № 8 (2017) Influence of traps in silicon dioxide on the breakdown of MOS structures
Aleksandrov O.
Том 53, № 6 (2019) Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys
Taranova A., Novitskii A., Voronin A., Taskaev S., Khovaylo V.
Том 52, № 1 (2018) Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures
Novikova N., Yakovlev V., Kucherenko I., Vinogradov V., Aleschenko Y., Muratov A., Karczewski G., Chusnutdinow S.
Том 53, № 12 (2019) InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
Nadtochiy A., Shchukin V., Cherkashin N., Denneulin T., Zhukov A., Maximov M., Gordeev N., Payusov A., Kulagina M., Shernyakov Y., Ledentsov N.
Том 51, № 1 (2017) InGaN/GaN light-emitting diode microwires of submillimeter length
Lundin W., Rodin S., Sakharov A., Lundina E., Usov S., Zadiranov Y., Troshkov S., Tsatsulnikov A.
Том 52, № 16 (2018) InGaN/GaN QDs Nanorods: Processing and Properties
Kotlyar K., Soshnikov I., Morozov I., Berezovskaya T., Kryzhanovskaya N., Kudryashov D., Lysak V.
Том 51, № 11 (2017) Inhomogeneous dopant distribution in III–V nanowires
Leshchenko E., Dubrovskii V.
Том 53, № 4 (2019) Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink
Gorbatyuk A., Ivanov B.
Том 53, № 16 (2019) Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A., Neizvestny I., Shwartz N.
Том 51, № 5 (2017) Injection-induced terahertz electroluminescence from silicon p–n structures
Zakhar’in A., Vasilyev Y., Sobolev N., Zabrodskii V., Egorov S., Andrianov A.
Том 51, № 8 (2017) InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
Sokura L., Parkhomenko Y., Moiseev K., Nevedomsky V., Bert N.
Том 53, № 9 (2019) In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique
Dorokhin M., Demina P., Erofeeva I., Zdoroveyshchev A., Kuznetsov Y., Boldin M., Popov A., Lantsev E., Boryakov A.
Том 50, № 6 (2016) Inter atomic force constants of binary and ternary tetrahedral semiconductors
Pal S., Tiwari R., Gupta D., Saraswat V., Verma A.
Том 53, № 10 (2019) Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode
Morozov K., Belonovskii A., Ivanov K., Girshova E., Kaliteevski M.
Том 50, № 13 (2016) Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range
Atdaev A., Danilyuk A., Labunov V., Prischepa S., Pavlov A., Basaev A., Shaman Y.
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