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Том 50, № 8 (2016) Electromagnetic radiation of electrons in corrugated graphene
Ktitorov S., Myhamadiarov R.
Том 52, № 14 (2018) Electromechanical Switch Based on InxGa1 –xAs Nanowires
Alekseev P., Sharov V., Dunaevskiy M., Cirlin G., Reznik R., Berkovits V.
Том 53, № 6 (2019) Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
Sitnikov S., Rodyakina E., Latyshev A.
Том 52, № 1 (2018) Electron Effective Mass and g Factor in Wide HgTe Quantum Wells
Gudina S., Neverov V., Ilchenko E., Bogolubskii A., Harus G., Shelushinina N., Podgornykh S., Yakunin M., Mikhailov N., Dvoretsky S.
Том 51, № 4 (2017) Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide
Marchenko A., Terukov E., Egorova A., Kiselev V., Seregin P.
Том 50, № 7 (2016) Electron exchange between tin impurity U centers in PbSzSe1–z alloys
Marchenko A., Terukov E., Seregin P., Rasnjuk A., Kiselev V.
Том 53, № 15 (2019) Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation
Grishina Y., Borgardt N., Volkov R., Gromov D., Savitskiy A.
Том 53, № 13 (2019) Electron Mobility Calculation of Diluted III–V-Nitrides Alloys
Chakir K., Bilel C., Rebey A.
Том 51, № 4 (2017) Electron mobility in the inversion layers of fully depleted SOI films
Zaitseva E., Naumova O., Fomin B.
Том 51, № 6 (2017) Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
Galiev G., Klochkov A., Vasil’evskii I., Klimov E., Pushkarev S., Vinichenko A., Khabibullin R., Maltsev P.
Том 50, № 2 (2016) Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
Том 52, № 15 (2018) Electron Transport by a Transverse Acoustoelectric Stoneley Wave
Morocha A., Rozhkov A.
Том 52, № 2 (2018) Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping
Safonov D., Vinichenko A., Kargin N., Vasil’evskii I.
Том 52, № 3 (2018) Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations
Davydov S.
Том 53, № 12 (2019) Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials
Maslov A., Proshina O.
Том 50, № 7 (2016) Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum
Kotousova I., Lebedev S., Lebedev A.
Том 53, № 16 (2019) Electronic and Optical Properties of Perovskite Quantum-Dot Dimer
Tepliakov N., Vovk I., Leonov M., Baranov A., Fedorov A., Rukhlenko I.
Том 53, № 2 (2019) Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface
Bondar N., Brodyn M., Matveevskaya N., Beynik T.
Том 51, № 5 (2017) Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method
Zarubanov A., Plyusnin V., Zhuravlev K.
Том 52, № 8 (2018) Electronic Processes in CdIn2Te4 Crystals
Grushka O., Chupyra S., Bilichuk S., Parfenyuk O.
Том 52, № 4 (2018) Electronic States and Persistent Currents in Nanowire Quantum Ring
Kokurin I.
Том 53, № 16 (2019) Electronic States in Cylindrical Core-Multi-Shell Nanowire
Rudakov A., Kokurin I.
Том 53, № 10 (2019) Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form
Zavodinsky V., Kuz’menko A.
Том 52, № 3 (2018) Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System
Borshch N., Kurganskii S.
Том 50, № 4 (2016) Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6)
Borshch N.
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